Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Darin Hoffman"'
Autor:
Meimei Z. Tidrow, Manijeh Razeghi, Vaidya Nathan, Binh-Minh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Pierre-Yves Delaunay
Publikováno v:
Proceedings of the IEEE. 97:1056-1066
In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (M
Autor:
Binh-Minh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Pierre-Yves Delaunay, Manijeh Razeghi
Publikováno v:
IEEE Journal of Quantum Electronics. 45:157-162
The recent introduction of a M-structure design improved both the dark current and R0 A performances of type-II InAs-GaSb photodiodes. A focal plane array fabricated with this design was characterized at 81 K. The dark current of individual pixels wa
Publikováno v:
IEEE Journal of Quantum Electronics. 44:462-467
We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II d
Autor:
Darin Hoffman, Thomas Proffen, Nalini G. Sundaram, Ram Seshadri, Ombretta Masala, Gavin Lawes, Katharine Page
Publikováno v:
Solid State Sciences. 8:1015-1022
Hard/soft CoFe2O4/ZnFe2O4 and soft/hard ZnFe2O4/CoFe2O4 core/shell nanoparticles were prepared by combining high-temperature thermolysis of metal oxide precursors with seed-mediated growth. Magnetic properties of the core/shell nanoparticles were com
Publikováno v:
IEEE Journal of Quantum Electronics. 42:126-130
The electroluminescence of a Type II InAs-GaSb superlattice heterodiode has been studied as a function of injection current and temperature in the spectral range between 3 and 13 /spl mu/m. The heterodiode comprises a Be-doped midwavelength infrared
Autor:
Darin Hoffman, Binh-Minh Nguyen, Manijeh Razeghi, Pierre Yves Delaunay, Edward Kwei Wei Huang
Publikováno v:
SPIE Proceedings.
In recent years, Type II InAs/GaSb superlattices grown on GaSb substrate have achieved significant advances in both structural design and material growth, making Type II superlattice infrared detector a rival competitor to the state-of-the-art MCT te
Autor:
Edward Kwei Wei Huang, Simeon Bogdanov, Binh-Minh Nguyen, Darin Hoffman, Pierre Yves Delaunay, Manijeh Razeghi, Paritosh Manurkar
Publikováno v:
SPIE Proceedings.
Recent advances in the design and fabrication of Type-II InAs/GaSb superlattices allowed the realization of high performance long wavelength infrared focal plane arrays. The introduction of an Mstructure barrier between the n-type contact and the π
Autor:
Binh-Minh Nguyen, Manijeh Razeghi, Pierre-Yves Delaunay, Darin Hoffman, Edward Kwei Wei Huang
Publikováno v:
SPIE Proceedings.
A challenge for type-II InAs/GaSb superlattice (T2SL) photodetectors is to achieve high fill factor, high aspect ratio etching for third generation focal plane arrays (FPAs). Initially, we compare the morphological and electrical results of single el
Autor:
Vaidya Nathan, Binh-Minh Nguyen, Simeon Bogdanov, Paritosh Manurkar, Pierre Yves Delaunay, Edward Kwei Wei Huang, Darin Hoffman, Manijeh Razeghi
Publikováno v:
SPIE Proceedings.
The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p+ - π - M - N+ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empiri
Autor:
Binh-Minh Nguyen, Edward Kwei Wei Huang, Manijeh Razeghi, Pierre Yves Delaunay, Darin Hoffman, Meimei Z. Tidrow, Vaidya Nathan
Publikováno v:
SPIE Proceedings.
Recent progress made in the structure design, growth and processing of Type-II InAs/GaSb superlattice photo-detectors lifted both the quantum efficiency and the R0A product of the detectors. Type-II superlattice demonstrated its ability to perform im