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Akademický článek

Autor: Darin Davis

Publikováno v: Journal of Moral Theology, Vol 10, Iss 1 (2021)

While considerable work has been done to expand the treatment of spiritual friendship found in sources such as Augustine, Aelred of Revaulx, and Aquinas, scant attention has been given to the important role of moral correction among friends. Yet mora

Externí odkaz: https://doaj.org/article/e7970c7dc92d4fdc9a783a9b93d02172

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Ultra low Rdson LDMOS with 12V BVDSS

Autor: Brendan Toner, Hafizah Binti Abdul Malik, Darin Davis, Gary Dolny, Terry Johnson, William Richards

Publikováno v: 2022 IEEE International Conference on Semiconductor Electronics (ICSE).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d5b3b52aa44583439613ce02664661c
https://doi.org/10.1109/icse56004.2022.9863145

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Addressing the challenges of sub-50nm channel LDMOS

Autor: Gary M. Dolny, William R. Richards, Brendan Toner, Terry Johnson, Christoph Ellmers, Stefan Eisenbrandt, Liu Zhengchao, Darin Davis

Publikováno v: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Low on-resistance LDMOS transistors frequently utilize a self-aligned body to minimize resistance and size of the device. This paper discusses the challenges associated with ultra-short channels and proposes contrarian solutions to address them while

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14453cdc9c16536f0ba48b13a4e0bf0a
https://doi.org/10.23919/ispsd50666.2021.9452248

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Schottky Source LDMOS - Electrical SOA Improvement through BJT Suppression

Autor: Darin Davis, Terry Johnson, Lutz Steinbeck, Brendan Toner, Ralf Granzner, Gary M. Dolny, William R. Richards, Stefan Eisenbrandt, Markus Frank

Publikováno v: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

This paper introduces the first application of a Schottky source approach for the purpose of expanding the Electrical Safe Operating Area (E-SOA) of a HV Transistor. Replacing the conventional PN source with a Schottky source suppresses the parasitic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::252a7641811109b0337ae74de1e7834e
https://doi.org/10.1109/ispsd46842.2020.9170117

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