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pro vyhledávání: '"Daria K. Batmanova"'
Publikováno v:
IEEE Transactions on Electron Devices. 60:1799-1806
An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (includ
Publikováno v:
2012 28th International Conference on Microelectronics Proceedings.
Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differe
Publikováno v:
2012 28th International Conference on Microelectronics Proceedings; 1/ 1/2012, p335-338, 4p
Publikováno v:
IEEE Transactions on Electron Devices; Jun2013, Vol. 60 Issue 6, p1799-1806, 8p