Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Darcy D. Wanger"'
Publikováno v:
Nano Letters. 13:5907-5912
We present a quantitative measurement of the number of trapped carriers combined with a measurement of exciton quenching to assess limiting mechanisms for current losses in PbS-quantum-dot-based photovoltaic devices. We use photocurrent intensity dep
Autor:
Darcy D. Wanger, Andrew P. Beyler, Ou Chen, Lisa F. Marshall, Xavier Brokmann, Moungi G. Bawendi, Daniel K. Harris, Jian Cui
Publikováno v:
Nature Chemistry. 5:602-606
The spectral linewidth of an ensemble of fluorescent emitters is dictated by a combination of the single emitter linewidths and sample inhomogeneities. For semiconductor nanocrystals, efforts to tune ensemble linewidths for optical applications have
Autor:
Scott M. Geyer, Darcy D. Wanger, Alexi C. Arango, Timothy P. Osedach, Moungi Bawendi, Ni Zhao, Liang-Yi Chang, Vladimir Bulovic
Publikováno v:
Advanced Materials. 22:5250-5254
Autor:
Christopher J. Tassone, Benjamin J. Schwartz, Sarah H. Tolbert, Darcy D. Wanger, Alexander L. Ayzner
Publikováno v:
The Journal of Physical Chemistry C. 112:18711-18716
We examine how thermal annealing affects the fullerene network in conjugated polymer bulk heterojunction (BHJ) solar cells. We begin by creating electron-only devices with a BHJ geometry by blending the fullerene derivative [6,6]-phenyl-C61-butyric-a
Autor:
Francesco Marsili, Tamar Mentzel, Darcy D. Wanger, David B. Strasfeld, Moungi G. Bawendi, Vitor R. Manfrinato, Hee-Sun Han, Karl K. Berggren, Jose Pablo Arrieta
Publikováno v:
Darcy Wanger
We demonstrated a technique to control the placement of 6 nm-diameter CdSe and 5 nm-diameter CdSe/CdZnS colloidal quantum dots (QDs) through electron-beam lithography. This QD-placement technique resulted in an average of three QDs in each cluster, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9098a479efce5b0083ebb40ff64f60d4
http://hdl.handle.net/1721.1/84485
http://hdl.handle.net/1721.1/84485
Autor:
Brian J. Walker, Moungi G. Bawendi, Darcy D. Wanger, David B. Strasfeld, Tamar Mentzel, Marc Kastner, Nirat Ray
Publikováno v:
Nano letters. 12(8)
We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals unimpeded by defects such as c
Autor:
Vladimir Bulovic, Liang-Yi Chang, David B. Strasfeld, Moungi G. Bawendi, Trisha L. Andrew, Ni Zhao, Darcy D. Wanger, Timothy P. Osedach, Patrick O. Brown
Publikováno v:
ACS nano. 6(4)
We investigate the bias-stress effect in field-effect transistors (FETs) consisting of 1,2-ethanedithiol-treated PbS quantum dot (QD) films as charge transport layers in a top-gated configuration. The FETs exhibit ambipolar operation with typical mob
Publikováno v:
Nano letters. 12(2)
We fabricated planar PbS quantum dot devices with ohmic and Schottky type electrodes and characterized them using scanning photocurrent and photovoltage microscopies. The microscopy techniques used in this investigation allow for interrogation of the
Autor:
Patrick O. Brown, Darcy D. Wanger, Timothy P. Osedach, Liang-Yi Chang, Ni Zhao, Moungi G. Bawendi, Vladimir Bulovic, Richard R. Lunt
Publikováno v:
Nano letters. 11(7)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovol
Autor:
Scott M. Geyer, Vladimir Bulovic, Darcy D. Wanger, Maddalena Binda, Timothy P. Osedach, Alexi C. Arango, Moungi G. Bawendi, Liang-Yi Chang, Ni Zhao
Publikováno v:
ACS nano. 4(7)
We fabricate PbS colloidal quantum dot (QD)-based solar cells using a fullerene derivative as the electron-transporting layer (ETL). A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, r