Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Daqian Guo"'
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2895 (2023)
InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied InGaAs photodiodes with different doping concentration absorber layers. The simulated r
Externí odkaz:
https://doaj.org/article/eb804e27ea8247ea9af31acb938fbd33
Publikováno v:
IEEE Transactions on Electron Devices. 70:2347-2351
Autor:
Daqian Guo, Jian Huang, Mourad Benamara, Yuriy I. Mazur, Zhuo Deng, Gregory J. Salamo, Huiyun Liu, Baile Chen, Jiang Wu
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-6
Publikováno v:
Soil Science Society of America Journal. 86:1153-1166
Publikováno v:
Infrared Physics & Technology. 130:104584
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-5
In this paper, we report the direct growth and characterization of a mid-wave infrared InAs/GaSb type-II superlattice n-B-p photodetector on a GaAs substrate. The design consists of an n-doped contact, a wide bandgap unipolar barrier, and a p-doped a
Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate
Publikováno v:
Journal of Lightwave Technology. 36:4033-4038
Mid-infrared photodetector based on submonolayer (SML) quantum dot quantum cascade structure monolithically grown on silicon substrate has been demonstrated in this paper. Both the optical and electrical characteristics of the SML quantum dot quantum
Autor:
Baile Chen, Mourad Benamara, Yurii Maidaniuk, Wei Chen, Yuriy I. Mazur, Yaojiang Chen, Huiyun Liu, Gregory J. Salamo, Daqian Guo, Jiang Wu, Zhuo Deng
Publikováno v:
Journal of Lightwave Technology. 36:2572-2581
In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolv
Autor:
Pamela Jurczak, Zhuo Deng, Daqian Guo, Marina Gutierrez, Baile Chen, Huiyun Liu, Wei Chen, Jiang Wu, Mingchu Tang, Claudia González Burguete, Yaojiang Chen, Fan Cui
Publikováno v:
IET Optoelectronics. 12:2-4
p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used t
Autor:
Claudia González Burguete, Zhuo Deng, Jiang Wu, Baile Chen, Zongheng Xie, Jian Huang, Huiyun Liu, Daqian Guo
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photolumines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be039b2372c6a9f1ee45392bbb1c61cc