Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Dapan Li"'
Autor:
Dapan Li, Changyong Lan, Arumugam Manikandan, SenPo Yip, Ziyao Zhou, Xiaoguang Liang, Lei Shu, Yu-Lun Chueh, Ning Han, Johnny C. Ho
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity
Externí odkaz:
https://doaj.org/article/cc465125cc4343f8a77c842cd50e2f05
Publikováno v:
Journal of the Iranian Chemical Society. 20:193-205
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::962de0eb49b8c25adcda607bf1618f63
https://doi.org/10.1007/s13738-022-02655-z
https://doi.org/10.1007/s13738-022-02655-z
Publikováno v:
Mathematical and Computational Applications, Vol 25, Iss 2, p 18 (2020)
In this paper, a prescribed performance adaptive backstepping control (PPABC) strategy is proposed to control the speed of a winding segmented permanent magnet linear synchronous motor (WS-PMLSM) with variable parameters and an unknown load disturban
Externí odkaz:
https://doaj.org/article/90f86f35c6aa4f11972965883acfc730
Autor:
Zhengxun Lai, SenPo Yip, Heng Zhang, Wei Wang, Fangzhou Li, Johnny C. Ho, Xiaolin Kang, You Meng, Dapan Li, Fei Wang
Publikováno v:
Journal of Materials Chemistry C. 8:13189-13196
Due to the excellent electrical and optical properties, small bandgap III–V nanowire (NW) materials hold great promise for future electronics and optoelectronics. In particular, InAs1−xSbx, the ternary alloy of InAs and InSb, is one of the most s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef1cceca8a7fa40bced1ecef10c6631
https://doi.org/10.1039/d0tc02715d
https://doi.org/10.1039/d0tc02715d
Autor:
SenPo Yip, Johnny C. Ho, Ziyao Zhou, Dapan Li, Changyong Lan, Xiaolin Kang, Ruoting Dong, Xiaoguang Liang, You Meng, Fangzhou Li
Publikováno v:
Nano Research. 12:1796-1803
Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78706ebacb6bff26a2d64fab6cef1ebb
https://doi.org/10.1007/s12274-019-2434-4
https://doi.org/10.1007/s12274-019-2434-4
Autor:
Johnny C. Ho, Yuanhang Cheng, Renjie Wei, Ziyao Zhou, Dapan Li, Xiaoguang Liang, Sai-Wing Tsang, Ruoting Dong, Xiuwen Xu, Guofa Dong
Publikováno v:
Applied Surface Science. 451:250-257
Due to a wide range of intriguing properties, such as efficient one-dimensional (1D) electron pathways and extraordinarily large surface areas, titanium dioxide (TiO2) nanotube arrays are considered as the promising electron transport material for hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f890b5838bca83ebb0a19df60b58b49f
https://doi.org/10.1016/j.apsusc.2018.04.245
https://doi.org/10.1016/j.apsusc.2018.04.245
Autor:
Johnny C. Ho, Yu Ze Chen, Kung-Hwa Wei, Chang Hong Shen, Pin Jung Chen, Yu Chuan Shih, Tzu-Chien Wei, Ching Chen Chang, Ling Lee, Dapan Li, Chia Wei Chen, Yen Ting You, Teng Yu Su, Cheng You Hong, Yi Chung Wang, Yu-Lun Chueh
Publikováno v:
ACS Applied Materials & Interfaces. 10:35477-35486
Selenium (Se) is one of the potential candidates as photodetector because of its outstanding properties such as high photoconductivity (∼8 × 104 S cm–1), piezoelectricity, thermoelectricity, and nonlinear optical responses. Solution phase synthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8025aa8b34e6278184c21b87f0dfde01
https://doi.org/10.1021/acsami.8b11676
https://doi.org/10.1021/acsami.8b11676
Publikováno v:
Nano Research. 11:5935-5945
Recently, owing to the excellent electrical and optical properties, n-type In2O3 nanowires (NWs) have attracted tremendous attention for application in memory devices, solar cells, and ultra-violet photodetectors. However, the relatively low electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70ec292dd6664b1e3abc2983ed7bd8b1
https://doi.org/10.1007/s12274-018-2106-9
https://doi.org/10.1007/s12274-018-2106-9
Autor:
Zhifei Zhou, Chun Li, Ziyao Zhou, Lei Shu, Dapan Li, SenPo Yip, Changyong Lan, Ruoting Dong, Lifan Shen, Johnny C. Ho
Publikováno v:
Nano Research. 11:3371-3384
Two-dimensional (2D) nanomaterials have recently attracted considerable attention due to their promising applications in next-generation electronics and optoelectronics. In particular, the large-scale synthesis of high-quality 2D materials is an esse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdf72f03fc4831307278e6119127f5b3
https://doi.org/10.1007/s12274-017-1941-4
https://doi.org/10.1007/s12274-017-1941-4
Autor:
Ning Han, Arumugam Manikandan, Ziyao Zhou, Johnny C. Ho, Lei Shu, SenPo Yip, Changyong Lan, Yu-Lun Chueh, Dapan Li, Xiaoguang Liang
Publikováno v:
Nature Communications
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. He
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad1d11d1adbfa8704690f6e7b5ce4f6f
http://europepmc.org/articles/PMC6458123
http://europepmc.org/articles/PMC6458123