Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Daohong Yang"'
Autor:
Ao Chen, Puyi Zhang, Yiwei Zheng, Xiaoxu Yuan, Guokun Ma, Yiheng Rao, Houzhao Wan, Nengfan Liu, Qin Chen, Daohong Yang, Hao Wang
Publikováno v:
Applied Physics Express, Vol 17, Iss 3, p 036505 (2024)
The linearity of conductance modulation of the artificial synapse severely restricts the recognition accuracy and the convergence rate in the learning of artificial neural networks. In this work, by alloy electrode engineering, a Ti–Ag device gaine
Externí odkaz:
https://doaj.org/article/773506f76e754764a6a54017d3a693a3
Autor:
Ting Cheng, Jianquan Jia, Lei Jin, Xinlei Jia, Shiyu Xia, Jianwei Lu, Kaiwei Li, Zhe Luo, Da Li, Hongtao Liu, Qiguang Wang, An Zhang, Daohong Yang, Zongliang Huo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 640-644 (2021)
Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata et al., 2007, Lee et al., 2
Externí odkaz:
https://doaj.org/article/b703b907fbba46ef9687c4cd26773cab
Autor:
Gaoqi Yang, Ao Chen, Nengfan Liu, Guokun Ma, Zhennan Lin, Yuyang Fu, Xiaohu Zhao, Yiheng Rao, Li Tao, Houzhao Wan, Jinxia Duan, Liangping Shen, Peng Sun, Daohong Yang, Hao Wang
Publikováno v:
IEEE Transactions on Electron Devices. 70:65-69
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b6e1f44fad70d00921dc2bb0cce871
https://doi.org/10.1109/ted.2022.3224093
https://doi.org/10.1109/ted.2022.3224093
Autor:
Ao Chen, Yuyang Fu, Guokun Ma, Gaoqi Yang, Nengfan Liu, Xiaohu Zhao, Ziqi Zhang, Li Tao, Houzhao Wan, Yiheng Rao, Jinxia Duan, Liangping Shen, Jun Zhang, Peng Sun, Daohong Yang, Ting-Chang Chang, Hao Wang
Publikováno v:
IEEE Electron Device Letters. 43:870-873
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62cf04c71a070009704221c10368c4d0
https://doi.org/10.1109/led.2022.3165789
https://doi.org/10.1109/led.2022.3165789
Autor:
Da Li, Daohong Yang, Jianwei Lu, Kaiwei Li, Cheng Ting, Shiyu Xia, Liu Hongtao, Zongliang Huo, Jianquan Jia, Lei Jin, An Zhang, Wang Qiguang, Xinlei Jia, Zhe Luo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 640-644 (2021)
Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata et al., 2007, Lee et al., 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::402bed4248bce9df6b44db704ecf11b9
https://ieeexplore.ieee.org/document/9434406/
https://ieeexplore.ieee.org/document/9434406/
Autor:
Jiandong Huang, L.W. Qu, J.J. Sheng, Z. Li, Xiangshui Miao, J.J. Sun, Chang Liu, P. An, Daohong Yang
Publikováno v:
Solid-State Electronics. 56:191-195
The thermal properties of a phase-change random access memory (PCRAM) cell are dominated by the phase-change recording material. The SET/RESET resistances, the minimum width of the SET/RESET pulse, the threshold voltage and the maximum temperature of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df5715820f672e57a0045d3d2253d85e
https://doi.org/10.1016/j.sse.2010.12.011
https://doi.org/10.1016/j.sse.2010.12.011