Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Dao N. H. Nam"'
Publikováno v:
Journal of Electronic Materials. 45:2311-2315
A nanopowder of iron was prepared using a high-energy ball milling method, which is capable of producing nanoparticles at a reasonably larger scale compared to conventional chemical methods. Analyses using x-ray diffraction and magnetic measurements
Autor:
Doan M. Quang, Chu T. A. Xuan, Do Hung Manh, Tran Duc Thanh, Dao N. H. Nam, Nguyen Xuan Phuc, Ta N. Bach, Ngo Thi Hong Le, Pham T. Tho
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
${\rm La}_{1.5}{\rm Sr}_{0.5}{\rm NiO}_{4}$ is well known as a dielectric material that has a colossal permittivity (up to $10^{7}$ ) and a weak paramagnet at room temperature. The permeability is about 1.005, which is just slightly larger than that
Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a Magnetic Tunnel Junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier. Since Co rich
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::356645945973f376a27b21b85831eb91
Autor:
Rhonda M. Stroud, Kevin G. West, Yoosuf N. Picard, Dao N. H. Nam, Stuart A. Wolf, Nabil Bassim, Jiwei Lu
Publikováno v:
Journal of Applied Physics. 107:113915
We report on peculiar magnetic hysteresis behavior of Ru0.25Cr0.75O2 thin films. We describe three unusual magnetic phenomena inherent to this material; (i) intrinsic positive exchange bias in a single phase epitaxial thin film ferrimagnet with the a
Publikováno v:
Journal of Applied Physics. 106:013905
Magnetic tunnel junctions (MTJs) with an AlOx barrier were fabricated by a biased target ion beam deposition (BTIBD) sputtering technique using a low energy ion source (0–50 eV) and voltage biased targets. The BTIBD system applies a bias voltage di
Publikováno v:
Applied Physics Letters. 93:152504
CoFe/FeMn, FeMn/CoFe bilayers and CoFe/FeMn/CoFe trilayers were grown in magnetic field and at room temperature. The exchange bias field $H_{eb}$ depends strongly on the order of depositions and is much higher at CoFe/FeMn than at FeMn/CoFe interface