Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Dao Dinh Ha"'
Autor:
Tran Van Trieu, I. Yu. Lovshenko, V. R. Stempitsky, K. V. Korsak, Tran Tuan Trung, Dao Dinh Ha, V. V. Kolos
Publikováno v:
Цифровая трансформация, Vol 29, Iss 1, Pp 72-80 (2023)
A comparative analysis of the characteristics of the main types of bolometers is indicated in the article. The constructive solution of an uncooled thermal detector of the bolometric type, formed using the technology of microelectromechanical systems
Externí odkaz:
https://doaj.org/article/6032fb1b2d2c4837b9e586875d8696dd
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 72-80 (2020)
The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lea
Externí odkaz:
https://doaj.org/article/4a94fadbedb649edb84477dbbb80f376
Device-technological simulation of the magnetosensitive sensor with integrated magnetic concentrator
Autor:
Stempitsky V. R., Dao Dinh Ha
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 15-21 (2018)
The paper presents results on research and optimization on the basis of device-technological modeling of the structural and operational characteristics of the magnetosensitive sensor with a disk-shaped integrated magnetic concentrator (IMC). The hig
Externí odkaz:
https://doaj.org/article/9b04173fef0a4a6bb4da2222d6e17fcc
Autor:
Stempitsky V. R., Dao Dinh Ha
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 28-32 (2017)
The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from -25 to 400ºC. The research was performed
Externí odkaz:
https://doaj.org/article/316dc817ec92495bbd2bd1bb703bb73a
Akademický článek
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Publikováno v:
2022 International Conference on Advanced Technologies for Communications (ATC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c391950fc6ecdaa145a4adbc32f0ad5
https://doi.org/10.1109/atc55345.2022.9943047
https://doi.org/10.1109/atc55345.2022.9943047
Autor:
Viktor Stempitsky, Trung Tran Tuan, Maryia Baranava, Dao Dinh Ha, Dzmitry Hvazdouski Vladislav Volcheck
Publikováno v:
2020 International Conference on Advanced Technologies for Communications (ATC).
The GaN high electron mobility transistor (HEMT) thermal characteristics were evaluated employing an integrated approach based on the combined use of ab initio (first-principles) and device simulations. The necessity of utilizing such a method arises
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90a87d22f6f3b5c391e26646a95849de
https://doi.org/10.1109/atc50776.2020.9255446
https://doi.org/10.1109/atc50776.2020.9255446
Publikováno v:
Nano- i Mikrosistemnaya Tehnika. 20:174-186
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79def5f873d628c3746f29be47cb9991
https://doi.org/10.17587/nmst.20.174-186
https://doi.org/10.17587/nmst.20.174-186
Autor:
Dao Dinh Ha, V. R. Stempitsky
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 28-32 (2017)
The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400°C. The research was performe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81e95f4f9809e9bf1403d6b594ae386c
https://doi.org/10.15222/tkea2017.1-2.28
https://doi.org/10.15222/tkea2017.1-2.28
Autor:
Ivan Lovshenko, Viktor Stempitsky, Dao Dinh Ha, Nguyen Trong Quang, Veranika Khanko, Tran Tuan Trung
Publikováno v:
2019 International Conference on Advanced Technologies for Communications (ATC).
The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm2/mg, 10.1 MeV.cm2/mg, 18.8 MeV.cm2/mg, 55.0 MeV.cm2/mg, corresponding to nitrogen ions15N+4with energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a09cc9c3f6fadd71add49766d4ed38e
https://doi.org/10.1109/atc.2019.8924508
https://doi.org/10.1109/atc.2019.8924508