Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Danyoung Cha"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract A study on a bias voltage‐dependent weight update characteristics in a sub‐threshold region of a low power synaptic pass‐transistor (SPT) is presented with a Hf‐doped zinc oxide active layer. The SPT is a synaptic thin‐film transis
Externí odkaz:
https://doaj.org/article/92814ebe784942f3afcc3d621e2ef4f1
Publikováno v:
IEEE Access, Vol 12, Pp 179813-179822 (2024)
We present a study on a weight-update characteristics dependent on electron densities of Hf-ZnO charge-trap layers (CTLs) in a low-power synaptic thin-film transistor (Syn-TFT) operating in the sub-threshold region. For a memory function of Syn-TFTs,
Externí odkaz:
https://doaj.org/article/047b393d852c4f4f994964df265128f5
Autor:
Gyoungyeop do, Danyoung Cha, Kunhee Tae, Nayeong Lee, Seokhyun Byun, Jeongseok Pi, Sungsik Lee
Publikováno v:
IEEE Access, Vol 12, Pp 170570-170580 (2024)
In this paper, we present a study on a retention characteristics dependent on a high- $\kappa $ gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer. A memory function of Syn-TFTs can be implemented in a gate
Externí odkaz:
https://doaj.org/article/c785b3386a744a7e9d460595797ed88a
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract We present a study on characteristics of operating region-dependent weight updates in a synaptic thin-film transistor (Syn-TFT) with an amorphous In–Ga–Zn–O (IGZO) channel layer. For a synaptic behavior (e.g. a memory phenomenon) of th
Externí odkaz:
https://doaj.org/article/3a40a198c4b748bab33af099e570d990
Publikováno v:
IEEE Access, Vol 10, Pp 35120-35130 (2022)
We present a simulation framework on a geometrical optimization rule of the synaptic pass-transistor (SPT) for a low power analog accelerator (AA). Here, the SPT is a synaptic transistor (Syn-Tr) in series with a load resistor to be scaled with respe
Externí odkaz:
https://doaj.org/article/e6bb9d89bd42413ebd0bbbf1ec0f596b
Publikováno v:
Crystals, Vol 9, Iss 4, p 192 (2019)
This paper provides a review of optical devices based on a wide band-gap transparent conducting oxide (TCO) while discussing related physical mechanisms and potential applications. Intentionally using a light-induced metastability mechanism of oxygen
Externí odkaz:
https://doaj.org/article/2918b86f6b4e4985b801fd3ae3a2753a
Publikováno v:
IEEE Transactions on Neural Networks and Learning Systems. 32:4728-4741
We present an intensive study on the weight modulation and charge trapping mechanisms of the synaptic transistor based on a pass-transistor concept for the direct voltage output. In this article, the pass-transistor concept for a metal-oxide-semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::536187cd4f1c8026ab19a5665915e72a
https://doi.org/10.1109/tnnls.2020.3047963
https://doi.org/10.1109/tnnls.2020.3047963
Publikováno v:
ICEIC
In this work, we present a study on an effect of a channel width variation in a synaptic pass-transistor (SPT) on a power consumption. The power consumption has been changed with different channel width, while other geometry parameters of the SPT rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e843b45a574e8e046a066744e901ce
https://doi.org/10.1109/iceic51217.2021.9369813
https://doi.org/10.1109/iceic51217.2021.9369813
Publikováno v:
2020 International Conference on Electronics, Information, and Communication (ICEIC).
In this work, we present the study on a weight modulation of a synaptic transistor with a charge trapping layer, demonstrating the voltage-to-voltage transfer by employing a load resistor at the output and the pass-transistor operation concept. The s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14bedc74b2ebc2d7dd633693bfd6047a
https://doi.org/10.1109/iceic49074.2020.9051170
https://doi.org/10.1109/iceic49074.2020.9051170
Publikováno v:
Crystals, Vol 9, Iss 4, p 192 (2019)
This paper provides a review of optical devices based on a wide band-gap transparent conducting oxide (TCO) while discussing related physical mechanisms and potential applications. Intentionally using a light-induced metastability mechanism of oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba8c47f7b95ecda19507de84f3764fe1
https://www.mdpi.com/2073-4352/9/4/192
https://www.mdpi.com/2073-4352/9/4/192