Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Danylyuk, S.V"'
Autor:
Danylyuk, S.V., Ott, R., Panaitov, G., Pickartz, G., Hollmann, E., Vitusevich, S.A., Belyaev, A.E., Klein, N.
Publikováno v:
In Thin Solid Films 2006 515(2):489-492
Publikováno v:
In Applied Surface Science 15 November 2004 238(1-4):143-146
Autor:
Belyaev, A.E, Makarovsky, O, Walker, D.J, Eaves, L, Foxon, C.T, Novikov, S.V *, Zhao, L.X, Dykeman, R.I, Danylyuk, S.V, Vitusevich, S.A, Kappers, M.J, Barnard, J.S, Humphreys, C.J
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2004 21(2):752-755
Autor:
Danylyuk, S.V. ∗, Vitusevich, S.A., Podor, B., Belyaev, A.E., Avksentyev, A.Yu., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.
Publikováno v:
In Microelectronics Journal May-August 2003 34(5-8):575-577
Autor:
Vitusevich, S.A *, Förster, A, Belyaev, A.E, Sheka, D.I, Lüth, H, Klein, N, Danylyuk, S.V, Konakova, R.V
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2002 13(2):811-814
Publikováno v:
Journal of Applied Physics; 11/15/2004, Vol. 96 Issue 10, p5625-5630, 6p, 8 Graphs
Autor:
Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::bd101f9dfa9cd586ba31806d3bd7ab2d
http://dspace.nbuv.gov.ua/handle/123456789/121621
http://dspace.nbuv.gov.ua/handle/123456789/121621
Autor:
Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::44ff5075b1aa1fd1ef9fdcdd499a2f82
http://dspace.nbuv.gov.ua/handle/123456789/118170
http://dspace.nbuv.gov.ua/handle/123456789/118170
Autor:
Vitusevich, S. A.1, Danylyuk, S.V.1, Klein, N.1, Petrychuk, M. V.2, Belyaev, A. E.3, Vertiatchikh, A.4, Eastman, L. F.4
Publikováno v:
International Journal of High Speed Electronics & Systems. Sep2004, Vol. 14 Issue 3, p138-144. 7p.
Autor:
Vitusevich, S.A., Klein, N., Petrychuk, M.V., Belyaev, A.E., Danylyuk, S.V., Konakova, R.V., Avksentyev, A.Yu., Danilchenko, B.A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.
Publikováno v:
Physica Status Solidi (C); 2003, Vol. 0 Issue 1, p78-81, 4p