Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Danuta. Petelenz"'
Publikováno v:
Thin Solid Films. 286:252-255
On a p-type silicon wafer with n+ source and drain contacts, covered by a SiO2Si3N4 dielectric insulating layer, field-effect transistors were made by spin coating with a polyaniline gate electrode layer. For comparison conventional IGFETs were also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e40b3234d4a8ef5928b49c1e6bac5a4e
https://doi.org/10.1016/s0040-6090(95)08233-6
https://doi.org/10.1016/s0040-6090(95)08233-6
Publikováno v:
Analytical Chemistry. 67:267-272
Construction and performance of a dual quartz crystal microbalance is described. The final probe has a dipstick configuration that is particularly suitable for sensing and monitoring applications in viscous and/or conducting liquids. The differential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c60b5865979ca02dbcd3cbc73d4b890a
https://doi.org/10.1021/ac00098a005
https://doi.org/10.1021/ac00098a005
Publikováno v:
Electroanalysis. 5:791-794
The optimization, characterization, and analytical performance of a suspended gate field-effect transistor (SGFET), with a selective polyaniline/mercury layer, for monitoring low levels of hydrogen cyanide in air are described. Reversible and reprodu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::464e78af519c1a6864c3ff02854e2fcf
https://doi.org/10.1002/elan.1140050912
https://doi.org/10.1002/elan.1140050912
Publikováno v:
Sensors and Actuators B: Chemical. 12:175-180
An insulated-gate field-effect transistor with the metal gate suspended 1–2 μm above the solid insulator is a miniature equivalent of a Kelvin probe. The suspended gate is a thin layer of platinum, which is mechanically supported by a layer of pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40caede4f8834e97c4fd36a6ac86c51c
https://doi.org/10.1016/0925-4005(93)80016-5
https://doi.org/10.1016/0925-4005(93)80016-5
Publikováno v:
The Analyst. 118:335-340
Fabrication of reliable chemically sensitive field effect transistors still poses significant technical difficulties. Problems related to integrity of the solid state part of the device, integrity of the final sensor package, definition of the sensit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e903efcab3ca2d10c92ad505900600a5
https://doi.org/10.1039/an9931800335
https://doi.org/10.1039/an9931800335
Publikováno v:
Mikrochimica Acta. 100:169-185
Spin-coated layer of poly(maleic anhydride) has been used to planarize photolithographically prepared substrates for bilayer-based sensors. It is possible to deposit the same material on top of the spun-on layer as a Langmuir-Blodgett film. The elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb66a02e6f1f8247b472741fa0c49e72
https://doi.org/10.1007/bf01244840
https://doi.org/10.1007/bf01244840
Publikováno v:
Applied Physics Letters. 63:1513-1515
Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2baeae1eafb9cd55695e8a158fd7197b
https://doi.org/10.1063/1.110759
https://doi.org/10.1063/1.110759
Publikováno v:
Applied Physics Letters. 60:2074-2076
The relationship between the pinhole density in silicon nitride layers deposited on oxide‐silicon structures and etching in buffered hydrofluoric acid is investigated in relation to the cooling down rate after Si3N4 deposition and subsequent anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f7240126009ecab00a942077772ff44
https://doi.org/10.1063/1.107093
https://doi.org/10.1063/1.107093
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2121
A two‐layer lift‐off process using aluminum and an inorganic dielectric for patterning noble metals is described. It produces a smoothly sloped metallization pattern and is compatible with the deposition temperatures up to 350 °C. The metal laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbce4696c875ee61c5c4df61c8e1c25
https://doi.org/10.1116/1.586552
https://doi.org/10.1116/1.586552
Publikováno v:
Analytical Chemistry. 57:1920-1923
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::437d2ca7f78f3a6c09de7f5dd94f7d8e
https://doi.org/10.1021/ac00286a028
https://doi.org/10.1021/ac00286a028