Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Dante Ahn"'
Autor:
Kwang Jae Lee, Yeong Jae Kim, Jung‐Hong Min, Chun Hong Kang, Ram Chandra Subedi, Huafan Zhang, Latifah Al‐Maghrabi, Kwangwook Park, Dante Ahn, Yusin Pak, Tien Khee Ng, Young Min Song, Boon S. Ooi, Osman M. Bakr, Jungwook Min
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated
Externí odkaz:
https://doaj.org/article/a49d0ad7c515454198e86d4f07c93c31
Autor:
Woochul Kim, Yeonju Seo, Dante Ahn, In Soo Kim, Chandran Balamurugan, Gun Young Jung, Sooncheol Kwon, Hyeonghun Kim, Yusin Pak
Publikováno v:
Advanced Science, Vol 11, Iss 21, Pp n/a-n/a (2024)
Abstract Selective spectral discrimination of visible and near‐infrared light, which accurately distinguishes different light wavelengths, holds considerable promise in various fields, such as automobiles, defense, and environmental monitoring. How
Externí odkaz:
https://doaj.org/article/15689330cd78487b8500685e72797896
Autor:
Shibnath Samanta, Gopinathan Anoop, WooJun Seol, Seong Min Park, HyunJin Joh, Je Oh Choi, Dante Ahn, Sanjith Unithrattil, Hoon Kim, Jiwon Yeom, Seungbum Hong, Ji Young Jo
Publikováno v:
Journal of Materials Chemistry A. 10:9960-9970
Si/Y-HfO2/Pt shows a large electrocaloric temperature change (ΔT) of 24.84 K with high reliability on thermal and electrical field cycling.
Publikováno v:
Journal of the Korean Physical Society. 77:784-789
In order to improve the performance of memory semiconductors, devices are miniaturized and the degree of integration is increasing. In response to this, fields such as FTJ, Fe-FET, and FeRAM using ferroelectrics are attracting attention. Among them,
Autor:
Sanjith Unithrattil, Gun Young Jung, Shibnath Samanta, WooJun Seol, Dante Ahn, Gopinathan Anoop, Woochul Kim, Ji Young Jo, Jun Young Lee
Publikováno v:
Materials
Volume 14
Issue 9
Materials, Vol 14, Iss 2126, p 2126 (2021)
Volume 14
Issue 9
Materials, Vol 14, Iss 2126, p 2126 (2021)
The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO4) is one such molecular FE crystal that exhibits ferr
Autor:
Shibnath Samanta, Anoop, Gopinathan, WooJun Seol, Seong Min Park, Hyun Jin Joh, Je Oh Choi, Dante Ahn, Hoon Kim, Jiwon Yeom, Seungbum Hong, Ji Young Jo
Publikováno v:
Journal of Materials Chemistry A; 5/14/2022, Vol. 10 Issue 18, p9960-9970, 11p
Publikováno v:
Applied Physics Letters. 118:013504
The discovery of ferroelectricity in HfO2 thin films extends the range of research on next-generation electronic devices. However, for commercial applications, reliable ferroelectric switching characteristics under electric field cycling of HfO2 thin
Publikováno v:
Advanced Materials Interfaces. 7:2070127
Autor:
Seung-Eon Ahn, Dante Ahn
Publikováno v:
Materials Letters. 263:127242
Carbon nanotube (CNT) sheets drawn from vertically grown CNT forests have the potential for application to thermoacoustic systems. The small heat capacity of the CNT sheet leads to a high sound pressure level by the input AC signal. We show through v