Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Danshuo Liu"'
2
Low radio frequency loss and buffer-free GaN directly on physical-vapor-deposition AlN/Si templates
Autor: Danshuo Liu, Xuelin Yang, Xing Zhang, Zidong Cai, Zhenghao Chen, Cheng Ma, Hongcai Yang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v: Applied Physics Express. 15:081001
We demonstrate 1.5 μm thick buffer-free GaN layers directly on physical vapor deposited (PVD) AlN/Si templates via delayed coalescence growth. The full width of half maximum of the X-ray diffraction rocking curves for GaN (002)/(102) planes are 525/
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8de7897b59cf17ada6af9b5ce9bc106
https://doi.org/10.35848/1882-0786/ac7ddb
Zobrazit plný text záznamu
3
Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates
Autor: Fujun Xu, Xinqiang Wang, Lai Wei, Weikun Ge, Maojun Wang, Jie Zhang, Danshuo Liu, Jianfei Shen, Shan Wu, Yuxia Feng, Bo Shen, Zidong Cai, Xuelin Yang, Yue Li
Publikováno v: Physical Review Materials. 4
The incorporation of point defects into semiconductors could substantially tailor their optical and electrical properties as well as the spin-based quantum properties. In terms of structural properties, however, efforts have seldom been devoted to th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d13414058306826c33042808f42bf9a
https://doi.org/10.1103/physrevmaterials.4.073402
Zobrazit plný text záznamu
5
Low RF loss and low dislocation density of GaN grown on high-resistivity Si substrates
Autor: Cheng Ma, Xuelin Yang, Jianfei Shen, Danshuo Liu, Zidong Cai, Zhenghao Chen, Jun Tang, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v: Applied Physics Express. 15:031003
The conductive channel induced by aluminum (Al) diffusion into high-resistivity Si substrates is one of the main contributors to RF loss of GaN-on-Si RF devices. However, it has been unclear how and when the Al diffuses into the substrates. Here, we
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::37900b219fa35b49f87015243a28ff29
https://doi.org/10.35848/1882-0786/ac5260
Zobrazit plný text záznamu
7
High-mobility n−-GaN drift layer grown on Si substrates
Autor: Xuelin Yang, Weikun Ge, Danshuo Liu, Bo Shen, Xinqiang Wang, Zidong Cai, Cheng Ma, Liwen Sang, Huayang Huang, Fujun Xu, Jianfei Shen, Zhenghao Chen
Publikováno v: Applied Physics Letters. 118:222106
We have investigated the interaction between carbon impurities and threading dislocations and their impact on the transport properties of GaN grown on Si substrates. The incorporation of carbon impurity was found to be associated with dislocation den
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62bfe1cd9f45626dd87d10ab96a8cb87
https://doi.org/10.1063/5.0049133
Zobrazit plný text záznamu
8
High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer
Autor: Danshuo Liu, Tongjun Yu, Jie Zhang, Ning Tang, Weikun Ge, Xuelin Yang, Jianfei Shen, Fujun Xu, Yuxia Feng, Kang Liu, Bo Shen, Zidong Cai, Xinqiang Wang, Huarui Sun
Publikováno v: Applied Physics Letters. 118:052104
High quality GaN films on SiC with low thermal boundary resistance (TBR) are achieved by employing an ultrathin low Al content AlGaN buffer layer. Compared with the conventional thick AlN buffer layer, the ultrathin buffer layer can not only improve
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7386a46f88e4de21445fd35adfb93379
https://doi.org/10.1063/5.0037796
Zobrazit plný text záznamu
9
Investigation of carrier compensation traps in n−-GaN drift layer by high-temperature deep-level transient spectroscopy
Autor: Weikun Ge, Xuelin Yang, Shan Wu, Lai Wei, Jianfei Shen, Xinqiang Wang, Bo Shen, Ning Tang, Xiaoguang He, Danshuo Liu, Fujun Xu, Huayang Huang
Publikováno v: Applied Physics Letters. 117:112103
Carrier compensation traps in n−-GaN drift layers grown on Si substrates were investigated using high-temperature deep-level transient spectroscopy (DLTS). The upper limit of the temperature range (700 K) allows for the study of deeper levels in th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd729091a8f76d32d5630d6380cc333c
https://doi.org/10.1063/5.0019576
Zobrazit plný text záznamu
10
High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer
Autor: Fujun Xu, Bo Shen, Jianfei Shen, Xinqiang Wang, Zidong Cai, Nan Xie, Weikun Ge, Danshuo Liu, Lai Wei, Xuelin Yang, Ning Tang
Publikováno v: Applied Physics Letters. 117:022103
We have investigated the growth of AlN films on hexagonal nano-concave-circle patterned Si substrates using metal–organic chemical vapor deposition. By depositing a thin AlN seed layer on the Si substrate before the pattern process, a high quality
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8eb7e0d93f044fbb22381f5bd625d390
https://doi.org/10.1063/5.0010285
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje