Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Danny Goossens"'
Autor:
Marianna Pantouvaki, Gerald Beyer, Hugo Bender, Koen Marrant, Farid Sebaai, Alain Moussa, Herbert Struyf, J. Versluijs, Bart Vereecke, Danny Goossens, Rudy Caluwaerts, Els Van Besien, Kristof Kellens
Publikováno v:
Microelectronic Engineering. 88:1618-1622
Scaling air-gap interconnects to 70nm pitch is demonstrated for the first time by combining air-gap technology (SiO"2 etch-back and non-conformal CVD) and the double patterning approach. A capacitance reduction of 45% was measured on the air-gaps com
Autor:
Peter Verheyen, Adil Masood, Wim Bogaerts, D. Van Thourhout, Guy Lepage, Danny Goossens, Philippe Absil, M. Pantouvaki
Publikováno v:
9th International Conference on Group IV Photonics, Proceedings
We present a Tungsten thermo-optic tuner on SOI, using standard CMOS back-end fabrication processes. Tuning efficiency of 35.2mW/FSR was achieved on ring resonators with 10%–90% heating time of 2.8µs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9ac2f8e1af1df2724f9a80b079d3c6f
https://biblio.ugent.be/publication/3006271/file/3006273
https://biblio.ugent.be/publication/3006271/file/3006273
Autor:
J. Van Campenhout, Wim Bogaerts, Guy Lepage, Shankar Kumar Selvaraja, Hui Yu, Johan Wouters, Peter Verheyen, Danny Goossens, W. Lee, Marianna Pantouvaki, Philippe Absil, Myriam Moelants
Publikováno v:
Optical Fiber Communication Conference.
Optical modulation with 8dB extinction ratio and 3dB insertion loss is achieved by applying a 1.5-Vpp drive voltage to a 10-μm ring with embedded MOS capacitor. Open-eye diagrams are obtained at 3Gbps.
Autor:
A. Veioso, Philippe Absil, Jorge A. Kittl, R. Mitsuhashi, Christoph Kerner, Stephan Brus, D. Baute, Christa Vrancken, J.-F. de Marneffe, Hui Yu, Masaaki Niwa, B. Onsia, T. Y. Hoffmann, X. Shi, S. Locorotondo, Thomas Chiarella, Rita Vos, Malgorzata Jurczak, Vasile Paraschiv, Peter Verheyen, Roger Loo, Sophia Arnauts, Barry O'Sullivan, Anne Lauwers, Serge Biesemans, Sofie Mertens, Danny Goossens, S. Ito, Thierry Conard, Shou-Zen Chang
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
We report, for the first time, a comprehensive study on the compatibility of state-of-the-art performance boosters with FUSI/HfSiON technology, resulting in record high-VT NMOS and PMOS devices with 725/370 muA/mum (at VDD=1.1 V, Ioff=20 pA/mum and J
Autor:
Marianna Pantouvaki, Adil Masood, Peter Verheyen, Philippe Absil, Guy Lepage, Dries Van Thourhout, Joris Van Campenhout, Danny Goossens, Wim Bogaerts
Publikováno v:
Optical Materials Express. 4:1383
We present fabrication and characterization of tungsten (W) heaters for thermo-optic tuning on silicon-on-insulator (SOI). The wafer-scale fabrication of these thermal tuners was done using standard complementary metal-oxide-semiconductor (CMOS) back
Autor:
Denis Shamiryan, Danny Goossens, Frederic Lazzarino, Olivier Richard, Vincent Truffert, Alain Vandervorst, Kaidong Xu, Werner Boullart, Jean-Francois de Marneffe
Publikováno v:
Japanese Journal of Applied Physics. 50:08JE07
In this work, two methods are combined in order to provide 25 nm contact holes at 90 nm pitch: the line/space double exposure immersion lithography and the plasma-assisted shrink technology. We first present the line/space imaging method with negativ
Autor:
Janko Versluijs, Jean-Franc¸ois De Marneffe, Danny Goossens, Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, Mireille Maenhoudt, Mohand Brouri, Johan Vertommen, Ji Soo Kim, Helen Zhu, Reza Sadjadi
Publikováno v:
Journal of Micro/Nanolithography, MEMS & MOEMS; Jan2009, Vol. 8 Issue 1, p011007-011007-6, 1p
Autor:
Marneffe, Jean-François de, Lazzarino, Frédéric, Goossens, Danny, Vandervorst, Alain, Richard, Olivier, Shamiryan, Denis, Xu, Kaidong, Truffert, Vincent, Boullart, Werner
Publikováno v:
Japanese Journal of Applied Physics; Aug2011, Vol. 50 Issue 8S1, p1-1, 1p