Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Danny Elad"'
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c7deaec00dcec7284d8651ec7dfbac6
https://doi.org/10.23919/eumic50153.2022.9783906
https://doi.org/10.23919/eumic50153.2022.9783906
Autor:
Danny Elad, Roee Ben Yishay
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents a low-noise and low power calibrated radiometer (Dicke-radiometer), operating at 75–110 GHz and developed in 0.12 µm SiGe BiCMOS technology. The chip consists of single-pole double-throw (SPDT) switch, low noise amplifier (LNA)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ed20ddb819cc1d521448d16f5e22508
https://doi.org/10.1109/ims19712.2021.9575002
https://doi.org/10.1109/ims19712.2021.9575002
Autor:
Roee Ben Yishay, Danny Elad
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper presents a multi-standard digitally controlled variable gain amplifier (VGA) for 5G phased array transceivers, designed and fabricated in 120 nm SiGe BiCMOS process. A current steering technique is used to minimize the phase variation unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a67245c96bb62c821efdfab4acd431d
https://doi.org/10.1109/ims30576.2020.9223927
https://doi.org/10.1109/ims30576.2020.9223927
Autor:
Roee Ben Yishay, Danny Elad
Publikováno v:
2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Integrated Ka-Band phase shifter with near-constant insertion-loss for 5G phased array applications is presented in this paper. The differential phase shifter design is based on variable artificial transmission line with digitally tuned inductance an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a04f778346808dff6f44824111d66f
https://doi.org/10.1109/sirf46766.2020.9040176
https://doi.org/10.1109/sirf46766.2020.9040176
Publikováno v:
2019 IEEE Asia-Pacific Microwave Conference (APMC).
This paper presents a high performance 81-86 GHz low noise amplifier (LNA), designed and implemented in an advanced $0.12 \mu\mathrm{m}$ SiGe technology. The LNA comprises five common-emitter stages and two integrated analog controlled attenuators, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce95102c56cca0c21d296d58a7e747b
https://doi.org/10.1109/apmc46564.2019.9038816
https://doi.org/10.1109/apmc46564.2019.9038816
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:1328-1337
The implementation of wideband mm-wave radars for automotive applications necessitates wideband, fast, and precise linear frequency modulation generation. In this paper, we propose to use dual-loop phase-locked loop (PLL) architecture for this task.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b07b8e27d70f7363911cd4731290f49c
https://doi.org/10.1109/jssc.2017.2784758
https://doi.org/10.1109/jssc.2017.2784758
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
This paper discusses the design and implementation of a 57-66 GHz bidirectional phased-array frontend in SiGe BiCMOS for time-duplexed transceivers. The TX path includes PA, power detector, variable attenuator and phase inverter. A fine-tuned 0-180°
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76a4803f36bd6fc78c0d4cec7433714f
https://doi.org/10.23919/eumic.2019.8909580
https://doi.org/10.23919/eumic.2019.8909580
Autor:
Danny Elad, Roee Ben Yishay
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents a single-output frequency multiplier, operating either as doubler or tripler for LO generation in 5G dual-band transceivers. The multiplier consists of differential pair, followed by a wideband 1-bit phase shifter that enables sum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a081f2ceff510f75c3758822834caa0
https://doi.org/10.1109/mwsym.2019.8700771
https://doi.org/10.1109/mwsym.2019.8700771
Autor:
Roee Ben Yishay, Danny Elad
Publikováno v:
2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
This paper presents a variable gain 81-86 GHz power amplifiers (PA) fabricated in a $0.12 \mu m$ SiGe BiCMOS technology. The PA consists of five common-emitter stages with power combining at the last stage and an intersatge linear nMOS attenuator. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e67961fef51fac1eb8e4c70b8345c91
https://doi.org/10.1109/sirf.2019.8709085
https://doi.org/10.1109/sirf.2019.8709085
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:1078-1087
Two fully integrated chipsets covering the entire E-band frequency range, 71–76/81–86 GHz, have been demonstrated. These designs, which were implemented in 0.13- $\mu{\hbox{m}}$ SiGe BiCMOS technology, use a sliding IF superheterodyne architectur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5cb986a73f6625f864bcd3fe9a4ed3d
https://doi.org/10.1109/tmtt.2016.2528981
https://doi.org/10.1109/tmtt.2016.2528981