Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Dann Morillon"'
Autor:
Olivier Gourhant, Pascal Masson, Franck Julien, Jerome Goy, Giada Ghezzi, Jean-Luc Ogier, Thibault Kempf, Dann Morillon, Clement Pribat, Alexandre Villaret, N. Cherault, Stephan Niel, Philippe Lorenzini
Publikováno v:
2018 International Integrated Reliability Workshop (IIRW).
In this paper, the reliability of thick SiO 2 gate oxides is assessed using quasi-static and multi-frequency capacitance measurements after constant current stress. A comprehensive study of oxide wear-out is presented, highlighting trapping mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a688c95ccd71cf239092391ae754d5
https://doi.org/10.1109/iirw.2018.8727082
https://doi.org/10.1109/iirw.2018.8727082
Autor:
Alexandre Villaret, Thibault Kempf, Dann Morillon, Jean-Luc Ogier, Giada Ghezzi, N. Cherault, Julien Delalleau, Franck Julien, Pascal Masson, Jerome Goy, Clement Pribat, Olivier Gourhant, Jean-Christophe Grenier, Stephan Niel
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
Targeting the integration of embedded non-volatile memories on thin-silicon body technology, high temperature oxide (HTO) is evaluated on a 40nm automotive eFlash process as replacement of furnace grown thick gate oxide for high voltage transistors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778ada43580ff7d4a24aaf81c3b444df
https://doi.org/10.1109/iirw.2017.8361239
https://doi.org/10.1109/iirw.2017.8361239
Autor:
Theodore S. Moise, Woody Hu Yiqiang, Karsten Beckmann, Avyaya Jayanthinarasimham, Martin Anselm, Thibault Kempf, Dann Morillon
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW).
• Precompetitive — University involvement • Fundamental materials research at Universities • Consortia, IMEC, SEMATECH • SRC • Risk averse to taking next step which is taking a precompetitive product into mass production • Closer to mar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c94c006b9e9c5bd2a688e58e911636
https://doi.org/10.1109/iirw.2017.8361247
https://doi.org/10.1109/iirw.2017.8361247
Autor:
Adam Dobri, Alain Toffoli, Luca Perniola, F. Balestra, Fausto Piazza, S. Jeannot, Dann Morillon, C. Jahan
Publikováno v:
2017 EUROSOI-ULIS Proceedings
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.117-119, ⟨10.1109/ULIS.2017.7962616⟩
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.117-119, ⟨10.1109/ULIS.2017.7962616⟩
session 9: Novel Materials and Technologies; International audience; Embedded flash memories having high-k metal gate-based logic devices will require modifications to the flash cells in order to remain economically feasible. One potential integratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a43c0a93a1cbfb2a6566ce3dda23ad8c
https://hal.archives-ouvertes.fr/hal-02014190
https://hal.archives-ouvertes.fr/hal-02014190
Autor:
Alain Toffoli, Loic Welter, J. P. Reynard, C. Jahan, Franck Julien, E. Richard, Dann Morillon, Pascal Masson, Jean Coignus
Publikováno v:
2017 International Conference of Microelectronic Test Structures (ICMTS).
This paper presents the performance and reliability evaluation of high voltage MOS gate stacks integrated in an advanced CMOS technology platform. The aim of this study is to evaluate the compatibility of a thick silicon dioxide with a high-k metal g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1467f72c9b9b61750449a2f6180b0b
https://doi.org/10.1109/icmts.2017.7954274
https://doi.org/10.1109/icmts.2017.7954274