Zobrazeno 1 - 10
of 152
pro vyhledávání: '"Danishevskii, A"'
Autor:
Danishevskii, A. M.1 (AUTHOR) Alex.D@mail.ioffe.ru, Shanina, B. D.2 (AUTHOR), Sharenkova, N. V.1 (AUTHOR), Gordeev, S. K.3 (AUTHOR)
Publikováno v:
Technical Physics. Nov2023, Vol. 68 Issue 11, p452-458. 7p.
Publikováno v:
Technical Physics. 92:676
Theoretical calculations of the electron density (taking into account the spin) of a model 16-atom carbon cluster with a manganese atom in a micropore showed that it is energetically favorable for manganese atoms to localize inside the pore and form
Autor:
Danishevskii, A. M.1 (AUTHOR) Alex.D@mail.ioffe.ru, Sharenkova, N. V.1 (AUTHOR), Shanina, B. D.2 (AUTHOR), Gordeev, S. K.3 (AUTHOR)
Publikováno v:
Technical Physics Letters. May2019, Vol. 45 Issue 5, p464-466. 3p.
Autor:
Bela Shanina, S. K. Gordeev, A. Yu. Rogachev, A. E. Kalmykov, R. N. Kyutt, V. V. Sokolov, A. M. Danishevskii
Publikováno v:
Physics of the Solid State. 59:2082-2088
The structural and magnetometric characteristics of a nanoporous carbon with nickel clusters in nanopores have been studied. The main attention is focused on the fact of substantial decrease in the nickel magnetization as nickel has a close contact t
Publikováno v:
Problems of Social Hygiene Public Health and History of Medicine. 27
In conditions of increased population migration, studying the situation on incidence of infectious and parasitogenic diseases is an actual problem. Particularly relevant is the analysis of newly detected incidence in the dynamics, which will allow to
Publikováno v:
In Carbon 2004 42(2):405-413
Autor:
Danishevskii, A.M *, Mosina, G.N, Smorgonskaya, E.A, Gordeev, S.K, Grechinskaya, A.V, Jardin, C, Meaudre, R, Marty, O
Publikováno v:
In Diamond & Related Materials 2003 12(3):378-382
Autor:
Shanina, B.D. ∗, Konchits, A.A., Kolesnik, S.P., Veynger, A.I., Danishevskii, A.M., Popov, V.V., Gordeev, S.K., Grechinskaya, A.V.
Publikováno v:
In Carbon 2003 41(15):3027-3036
Autor:
I. M. Kotina, M. S. Lasakov, N. V. Bazlov, I. S. Drachnev, M. V. Trushin, A. M. Danishevskii, E. V. Unzhakov, A. V. Derbin, A. M. Kuzmichev, O. I. Konkov
Publikováno v:
Journal of Physics: Conference Series. 1697:012181
Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fix
Autor:
Smorgonskaya, E, Kyutt, R, Danishevskii, A, Jardin, C, Meaudre, R, Marty, O, Gordeev, S, Grechinskaya, A
Publikováno v:
In Journal of Non-Crystalline Solids 2002 299 Part 2:810-814