Zobrazeno 1 - 10
of 456
pro vyhledávání: '"Danilov Yu. A."'
Autor:
Danilov Yu. A., Ermakov S. V.
Publikováno v:
Vestnik MGTU, Vol 18, Iss 4, Pp 610-619 (2015)
The authors have offered and proved the following security options of pelagic trawling in the sea canyon: the tolerance of the vessel from the optimal track; the minimum width of the canyon giving opportunity for the conditions to ensure the safety o
Externí odkaz:
https://doaj.org/article/e224e703a3534992b50fff3d7121e312
Akademický článek
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Autor:
Kudrin, A. V., Lesnikov, V. P., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Demina, P. B., Pavlov, D. A., Usov, Yu. V., Milin, V. E., Kuznetsov, Yu. M., Kriukov, R. N., Konakov, A. A., Tabachkova, N. Yu.
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM
Externí odkaz:
http://arxiv.org/abs/1911.00327
Autor:
Kudrin, A. V., Lesnikov, V. P., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Antonov, I. N., Kriukov, R. N., Zubkov, S. Yu., Nikolichev, D. E., Konakov, A. A., Dudin, Yu. A., Kuznetsov, Yu. M., Sobolev, N. A., Temiryazeva, M. P.
The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. I
Externí odkaz:
http://arxiv.org/abs/1902.03465
Autor:
Kudrin, A. V., Lesnikov, V. P., Pavlov, D. A., Usov, Yu. V., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Milin, B. E., Kriukov, R. N., Sobolev, N. A., Trushin, V. N.
Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb
Externí odkaz:
http://arxiv.org/abs/1810.13271
Autor:
Kudrin, A. V., Vikhrova, O. V., Danilov, Yu. A., Dorokhin, M. V., Kalentyeva, I. L., Konakov, A. A., Vasiliev, V. K., Pavlov, D. A., Usov, Yu. V., Zvonkov, B. N.
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn {\delta}-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium i
Externí odkaz:
http://arxiv.org/abs/1804.07650
Autor:
Alaferdov, A.V., Lebedev, O.V., Roggero, U.F.S., Hernandez-Figueroa, H.E., Nista, S.V.G., Trindade, G.M., Danilov, Yu A., Ozerin, A.N., Moshkalev, S.A.
Publikováno v:
In Results in Materials September 2022 15
Autor:
Kudrin, A. V., Danilov, Yu. A., Lesnikov, V. P., Vikhrova, O. V., Pavlov, D. A., Usov, Yu. V., Antonov, I. N., Krukov, R. N., Sobolev, N. A.
The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The
Externí odkaz:
http://arxiv.org/abs/1705.09318
Akademický článek
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Autor:
Balanta, M. A. G., Brasil, M. J. S. P., Iikawa, F., Mendes, Udson C., Brum, J. A., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Zvonkov, B. N.
Publikováno v:
Sci. Rep. 6, 24537 (2016)
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs b
Externí odkaz:
http://arxiv.org/abs/1511.02881