Výsledky vyhledávání - "Danilov, Iuri"

Ferromagnetic nanoclusters formed by Mn implantation in GaAs

Autor: Couto Junior, Odilon Divino Damasceno, Brasil, Maria José Santos Pompeu, Likawa, Fernando, Giles, Carlos Manuel, Adriano, C., Bortoleto, José Roberto Ribeiro, Pudenzi, Marcio Alberto Araujo, Gutierrez, H.R., Danilov, Iuri

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs sample were analyzed by x-ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::d152e1326b232993b7c10ea1c07ca705

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Electrical activation of carbon in GaAs : implantation temperature effects

Autor: Danilov, Iuri, Souza, Joel Pereira de, Murel, A.V., Pudenzi, Marcio Alberto Araujo

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::bbed1884c705793679694e1a7991c81b

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Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation

Autor: Danilov, Iuri, Souza, Joel Pereira de, Boudinov, Henri Ivanov, Murel, A.V., Shashkin, V.I.

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher than that predicted for thic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::cf50b618907077c2afdbfc068713f228

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Electrical isolation of n-type GaAs layers by proton bombardment : effects of the irration temperature

Autor: Souza, Joel Pereira de, Danilov, Iuri, Boudinov, Henri Ivanov

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at temperatures from - 100 to 22

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::d5b8a03bd00f273d9a103537aa33e770

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