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Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:765
Argon/oxygen based chemically assisted ion-beam etching has been investigated for the patterning of stacked capacitor platinum electrodes at ground rules of 200 nm and below. Titanium nitride and bilayers of titanium on top of titanium nitride were u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d760f0317217d561c4f6674933823bb7
https://doi.org/10.1116/1.591274
https://doi.org/10.1116/1.591274
