Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Daniele Piumi"'
Autor:
Amelia Turnquist, Naoyuki Kofuji, Joseph Sebastian, Zecheng Liu, Hiroshi Kou, Hideaki Fukuda, Yoann Tomczak, Yiting Sun, Daniele Piumi, David De Roest
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XII.
Autor:
Mihir Gupta, Joao Antunes Afonso, Philippe Bézard, Remi Vallat, Roberto Fallica, Hyo Seon Suh, Sandip Halder, Danilo De Simone, Zecheng Liu, Fanyong Ran, Hideaki Fukuda, Yiting Sun, David De Roest, Daniele Piumi
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Gerald Beyer, Joeri De Vos, Lan Peng, Anne Jourdain, Daniele Piumi, Eric Beyne, Nina Tutunjyan, Andy Miller, Nouredine Rassoul, Stefaan Van Huylenbroeck, Fumihiro Inoue, Stefano Sardo
Publikováno v:
Microelectronic Engineering. 196:38-48
Since the challenges of maintaining the Moore's law - through traditional dimensional scaling or exploiting new materials properties - are becoming increasingly difficult, 3D integration technologies are gaining more and more attention and importance
Publikováno v:
Microelectronic Engineering. 192:14-18
An industry-friendly approach to fabricate III-V vertical FETs is demonstrated, focusing on n+/i/n + InGaAs stacks grown inside wide-field trenches defined in an oxide layer (field oxide) on 300 mm Si wafers. Two concepts of vertical nanowire pattern
Autor:
Andy Miller, Nina Tutunjyan, Janet Hopkins, Nouredine Rassoul, Joeri De Vos, Fumihiro Inoue, Oliver Ansel, Eric Beyne, Daniele Piumi, Huma Ashraf, Gerald Beyer, Dave Thomas, Jash Patel, Stefano Sardo, Anne Jourdain, Edward Walsby
Publikováno v:
Microelectronic Engineering. 192:30-37
Over the past few years, extreme wafer thinning has acquired more interest due to its importance in 3D stacked system architecture. This technique facilitates multi-wafer stacking for via last advanced packaging. From a cost and wafer integrity point
Autor:
Nicola Kissoon, Moyra Mc Manus, Ming Mao, Guido Schiffelers, David De Roest, Paulina Rincon Delgadillo, Abhinav Pathak, Victor Blanco, Etienne de Poortere, Daniele Piumi, Eric Hendrickx, Danilo De Simone, Gijsbert Rispens, Pieter Vanelderen, Yoann Tomczak, Frederic Lazzarino, Geert Vandenberghe
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Enhanced EUV lithography (EUVL) resist performance, combined with optimized post processing techniques, are vital to ensure continued scaling and meet the requirements for the industry N5 node and beyond. Sequential infiltration synthesis (SIS) is a
Autor:
Peter Biolsi, Frederic Lazarrino, Danilo De Simone, Akiteru Ko, Angelique Raley, Sophie Thibaut, Ming Mao, Daniele Piumi, Kaushik A. Kumar, Andrew Metz, Kathy Barla
Publikováno v:
Advanced Etch Technology for Nanopatterning VII.
The semiconductor industry has been pushing the limits of scalability by combining 193nm immersion lithography with multi-patterning techniques for several years. Those integrations have been declined in a wide variety of options to lower their cost
Autor:
Sara Paolillo, Daniele Piumi, Nadia Vandenbroeck, Frederic Lazzarino, Kathy Barla, Suseendharan Sakthikumar, Alain Moussa, Ming Mao, Danilo De Simone
Publikováno v:
Advanced Etch Technology for Nanopatterning VII.
Year after year, the semiconductor industry overcomes a tremendous amount of technical challenges to satisfy Moore’s law. Through innovative device architectures, smart design, new integration and patterning concepts, better tools and new materials
Autor:
Christophe Lorant, Douglas Mckenzie, Toby Hopf, Huirong Yao, Farid Sebaai, Daniele Piumi, Efrain Altamirano-Sánchez, Claire Petermann, Salem K. Mullen, Dalil Rahman, Elizabeth Wolfer, Joonyeon Cho, Geert Mannaert, Munirathna Padmanaban, SungEun Hong
Publikováno v:
SPIE Proceedings.
There is a growing interest in new spin on metal oxide hard mask materials for advanced patterning solutions both in BEOL and FEOL processing. Understanding how these materials respond to plasma conditions may create a competitive advantage. In this
Autor:
Danilo De Simone, Michael Kocsis, Kaushik A. Kumar, Frederic Lazzarino, Daniele Piumi, Peter De Schepper, Fumiko Yamashita, Ming Mao, Vinh Luong
Publikováno v:
SPIE Proceedings.
Inpria metal-oxide photoresist (PR) serves as a thin spin-on patternable hard mask for EUV lithography. Compared to traditional organic photoresists, the ultrathin metal-oxide photoresist (~12nm after development) effectively mitigates pattern collap