Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae

Autor: Stefano Cecchi, Jamo Momand, Daniele Dragoni, Omar Abou El Kheir, Federico Fagiani, Dominik Kriegner, Christian Rinaldi, Fabrizio Arciprete, Vaclav Holý, Bart J. Kooi, Marco Bernasconi, Raffaella Calarco

Publikováno v: Advanced Science, Vol 11, Iss 1, Pp n/a-n/a (2024)

Abstract The possibility to engineer (GeTe)m(Sb2Te3)n phase‐change materials to co‐host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel

Externí odkaz: https://doaj.org/article/6c238b86e2b44ab485a514f22d7305c6

Structural and electronic properties of the Te-Si(111) surface from first principles

Autor: Daniele Dragoni

The structural and electronic properties of an atomically-flat Te-Si(111) surface have been investigated by means of density-functional theory calculations. This system is interesting because it provides a template for the epitaxial growth of inheren

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5625493ee589b06d5a389abc77648aff
https://hdl.handle.net/10281/398232

Metal-semiconductor transition in the supercooled liquid phase of the Ge2Sb2Te5 and GeTe compounds

Autor: M. Cobelli, Daniele Dragoni, Marco Bernasconi, S. Caravati

Publikováno v: Physical Review Materials. 5

The ${\mathrm{Ge}}_{2}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{5}$ and GeTe compounds are of interest for applications in phase change memories. In the reset process of the memory the crystal is rapidly brought above the melting temperature ${T}_{m}$ by Joule

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9cd1a865bc28d6391360e2c449f268b8
https://doi.org/10.1103/physrevmaterials.5.045004

Density functional simulations of decomposition pathways of Ge-rich GeSbTe alloys for phase change memories

Autor: O Abou El Kheir, Daniele Dragoni, Marco Bernasconi

Germanium-rich GeSbTe alloys have recently emerged as promising materials for embedded phase change memories of interest for applications in the automotive sector thanks to the high crystallization temperature of their amorphous phase. Crystallizatio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d82ae9c0802b193261241b9c9a2f278
http://hdl.handle.net/10281/333006

Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys

Autor: Daniele Dragoni, Václav Holý, Stefano Cecchi, Elisa Tisbi, Fabrizio Arciprete, Raffaella Calarco, Dominik Kriegner, Eugenio Zallo, Marco Bernasconi

Publikováno v: Advanced functional materials
29 (2019): 1805184. doi:10.1002/adfm.201805184
info:cnr-pdr/source/autori:S Cecchi, and D Dragoni, and D Kriegner, and E Tisbi, and E Zallo, and F Arciprete, and V Hol?, and Bernascon M, and Calarco R,/titolo:Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys/doi:10.1002%2Fadfm.201805184/rivista:Advanced functional materials (Print)/anno:2019/pagina_da:/pagina_a:1805184/intervallo_pagine:1805184/volume:29

In recent years strain engineering is proposed in chalcogenide superlattices (SLs) to shape in particular the switching functionality for phase change memory applications. This is possible in Sb2Te3/GeTe heterostructures leveraging on the peculiar be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0de5197c122e71d58f3277aacb74ccd1
http://hdl.handle.net/2108/208986