Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Daniele Chiappe"'
Autor:
Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1048-1055 (2018)
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their
Externí odkaz:
https://doaj.org/article/b3e6abfea7bb4f1db4bad4d5dfcd0818
Autor:
Gilles Delie, Peter M. Litwin, Gaby C. Abad, Stephen J. McDonnell, Daniele Chiappe, Valeri V. Afanasiev
Publikováno v:
Journal of Vacuum Science & Technology A. 40:062201
Internal photoemission of electrons was used to determine the energy position of the top valence band of mono- and few-layer WS2 on an SiO2/Si substrate. It was found, contrary to density functional theory calculations, that the valence band top in W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a568b788281a37a2f7a3c1c1cf3b9a7
https://doi.org/10.1116/6.0001987
https://doi.org/10.1116/6.0001987
Autor:
Michel Houssa, G. Delie, Peter M. Litwin, Daniele Chiappe, Stephen McDonnell, Valeri Afanas'ev
Internal photoemission spectroscopy was used to determine the valence band top energy position in few-monolayer WS2 and WSe2 films directly synthesized on top of the SiO2 insulator. It is found that in WS2 the valence band top edge lies systematicall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7261b0ac30fc17c8ffda8565cd974a1c
https://lirias.kuleuven.be/handle/123456789/661259
https://lirias.kuleuven.be/handle/123456789/661259
Autor:
Alessandra Leonhardt, Daniele Chiappe, César J. Lockhart de la Rosa, Anda Mocuta, Philippe Matagne, Stefan De Gendt, Anh Khoa Augustin Lu, Marc Heyns, Devin Verreck, Goutham Arutchelvan, Geoffrey Pourtois, Iuliana Radu
Publikováno v:
IEEE Transactions on Electron Devices. 65:4635-4640
2-D material FETs hold the promise of excellent gate control, but the impact of nonidealities on their performance remains poorly understood. This is because of the need, so far, to use computationally intensive nonequilibrium Green’s function (NEG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120156cccc6db1aaf04cd07961293607
https://doi.org/10.1109/ted.2018.2863750
https://doi.org/10.1109/ted.2018.2863750
Autor:
Carlo Grazianetti, Alessio Lamperti, Daniele Chiappe, Eugenioluigi Cinquanta, Emiliano Bonera, Gabriele Faraone, Emilio Scalise, Christian Martella, Alessandro Molle
Publikováno v:
Faraday Discussions
In the realm of two-dimensional material frameworks, single-element graphene-like lattices, known as Xenes, pose several issues concerning their environmental stability, with implications for their use in technology transfer to a device layout. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e385f3c4b2c1cc810a9cf250bdd48ca
https://zenodo.org/record/4139955
https://zenodo.org/record/4139955
Autor:
Cedric Huyghebaert, Inge Asselberghs, Alessandra Leonhardt, Iuliana Radu, Stefan De Gendt, Daniele Chiappe
Publikováno v:
IEEE Electron Device Letters. 38:1606-1609
The effects of oxidants both in the channel and contact regions of MoS2 transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in metal-organic chemical vapor deposition MoS2 and pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe7134cf7f5c4d72b4cdc218180c767
https://doi.org/10.1109/led.2017.2752424
https://doi.org/10.1109/led.2017.2752424
Autor:
Ankit Nalin Mehta, Kristof Paredis, Alexis Franquet, Hugo Bender, Olli Virkki, Cedric Huyghebaert, Inge Asselberghs, Marco Mascaro, Umberto Celano, Iuliana Radu, Ilse Hoflijki, Wilfried Vandervorst, Daniele Chiappe
Publikováno v:
ECS Transactions. 77:41-47
As Si-based electronic devices are approaching their projected scaling limits, layered two-dimensional (2D) materials such as transition metal dichalcogenides (TMDs) are extensively studied as potential new channel materials and fundamental building
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9cf582ac08a0d4916ec22ce208ce3d2
https://doi.org/10.1149/07702.0041ecst
https://doi.org/10.1149/07702.0041ecst
Autor:
Alessandra, Leonhardt, Daniele, Chiappe, Valeri V, Afanas'ev, Salim, El Kazzi, Ilya, Shlyakhov, Thierry, Conard, Alexis, Franquet, Cedric, Huyghebaert, Stefan, de Gendt
Publikováno v:
ACS applied materialsinterfaces. 11(45)
For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with high-performance electronic systems, one of the greatest challenges is the realization of doping and comprehension of its mechanisms. Low-temperature atomic laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::542e164523761e0c165dbc782e2839f4
https://pubmed.ncbi.nlm.nih.gov/31625717
https://pubmed.ncbi.nlm.nih.gov/31625717
Autor:
Jonathan, Ludwig, Ankit Nalin, Mehta, Marco, Mascaro, Umberto, Celano, Daniele, Chiappe, Hugo, Bender, Wilfried, Vandervorst, Kristof, Paredis
Publikováno v:
Nanotechnology. 30(28)
Two-dimensional transition metal dichalcogenides have been the focus of intense research for their potential application in novel electronic and optoelectronic devices. However, growth of large area two-dimensional transition metal dichalcogenides in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ef7a443f1bfcda39af80f18df5d59803
https://pubmed.ncbi.nlm.nih.gov/30921772
https://pubmed.ncbi.nlm.nih.gov/30921772
Autor:
Inge Asselberghs, Sreetama Banerjee, Valery V. Afanas'ev, Steven Brems, Cedric Huyghebaert, Iuliana Radu, G. Delie, Daniele Chiappe, Benjamin Groven
Publikováno v:
Nano Express. 2:024004
Using internal photoemission of electrons, the energy position of the valence band top edge in 1 monolayer WS2 films on top of SiO2 thermally-grown on Si was monitored to evaluate the stability of the WS2 layer with respect to two critically importan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f374dd02be5a01062ad7e5d8a12e21b
https://doi.org/10.1088/2632-959x/ac022b
https://doi.org/10.1088/2632-959x/ac022b