Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Daniele, Varsano"'
Autor:
Miki Bonacci, Junfeng Qiao, Nicola Spallanzani, Antimo Marrazzo, Giovanni Pizzi, Elisa Molinari, Daniele Varsano, Andrea Ferretti, Deborah Prezzi
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-10 (2023)
Abstract The automation of ab initio simulations is essential in view of performing high-throughput (HT) computational screenings oriented to the discovery of novel materials with desired physical properties. In this work, we propose algorithms and i
Externí odkaz:
https://doaj.org/article/21f5a90eb1604577acd68b0ad26003e4
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-8 (2023)
Abstract Many-body perturbation theory methods, such as the G 0 W 0 approximation, are able to accurately predict quasiparticle (QP) properties of several classes of materials. However, the calculation of the QP band structure of two-dimensional (2D)
Externí odkaz:
https://doaj.org/article/1790b41958ed4454beace949ceed6317
Autor:
Angela Montanaro, Francesca Giusti, Matteo Zanfrognini, Paola Di Pietro, Filippo Glerean, Giacomo Jarc, Enrico Maria Rigoni, Shahla Y. Mathengattil, Daniele Varsano, Massimo Rontani, Andrea Perucchi, Elisa Molinari, Daniele Fausti
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Here, the authors investigate the optical response of bulk black phosphorus to mid-infrared pulses, and find that while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the si
Externí odkaz:
https://doaj.org/article/4eadf106d724414fad15842455310f41
Autor:
Daniele Varsano, Sandro Sorella, Davide Sangalli, Matteo Barborini, Stefano Corni, Elisa Molinari, Massimo Rontani
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
It has long been anticipated theoretically that semiconductors with small band gaps may form a correlated exciton insulator phase, but it has been difficult to find material realisations. Here, the authors predict numerically that zero-gap armchair c
Externí odkaz:
https://doaj.org/article/c6b6b80edd9744f89fa1c49602afe784
Autor:
Matteo Zanfrognini, Nicola Spallanzani, Miki Bonacci, Elisa Molinari, Alice Ruini, Marilia J. Caldas, Andrea Ferretti, Daniele Varsano
Publikováno v:
Physical Review B. 107
Publikováno v:
Energies, Vol 13, Iss 14, p 3516 (2020)
In view of their applicability in optoelectronics, we review here the relevant structural, electronic, and optical features of the inorganic Pb-free halide perovskite class. In particular, after discussing the reasons that have motivated their introd
Externí odkaz:
https://doaj.org/article/1c3ebcf66bbe4ff39709445bf4123bd5
Publikováno v:
Physical Review Materials. 6
We perform a density functional theory study of the effects of oxygen adsorption on the structural and electronic properties of Gr/Co(0001) and Gr/Co/Ir(111) interfaces. In both interfaces, the graphene-Co distance increases with increasing O concent
Many-body perturbation theory methods, such as the G0W0 approximation, are able to accurately predict quasiparticle (QP) properties of several classes of materials. However, the calculation of the QP band structure of two-dimensional (2D) semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01dc57b996d5518d5b9441fdc1569f5f
http://arxiv.org/abs/2205.11946
http://arxiv.org/abs/2205.11946
Autor:
Michele Amato, Stefano Ossicini, Daniele Varsano, Matteo Bertocchi, Ivan Marri, Andrea Ferretti
Publikováno v:
PCCP. Physical chemistry chemical physics
22 (2020): 25593–25605. doi:10.1039/d0cp04013d
info:cnr-pdr/source/autori:Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano/titolo:Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures/doi:10.1039%2Fd0cp04013d/rivista:PCCP. Physical chemistry chemical physics (Print)/anno:2020/pagina_da:25593/pagina_a:25605/intervallo_pagine:25593–25605/volume:22
Physical Chemistry Chemical Physics
22 (2020): 25593–25605. doi:10.1039/d0cp04013d
info:cnr-pdr/source/autori:Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano/titolo:Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures/doi:10.1039%2Fd0cp04013d/rivista:PCCP. Physical chemistry chemical physics (Print)/anno:2020/pagina_da:25593/pagina_a:25605/intervallo_pagine:25593–25605/volume:22
Physical Chemistry Chemical Physics
We combine density functional theory and many body perturbation theory to investigate the electronic properties of Si(100) and Ge(100) surfaces terminated with halogen atoms (-I, -Br, -Cl, -F) and other chemical functionalizations (-H, -OH, -CH3) add
Autor:
Angela Montanaro, Francesca Giusti, Matteo Zanfrognini, Paola Di Pietro, Filippo Glerean, Giacomo Jarc, Enrico Maria Rigoni, Shahla Y. Mathengattil, Daniele Varsano, Massimo Rontani, Andrea Perucchi, Elisa Molinari, Daniele Fausti
Publikováno v:
Nature Communications
The competition between the electron-hole Coulomb attraction and the 3D dielectric screening dictates the optical properties of layered semiconductors. In low-dimensional materials, the equilibrium dielectric environment can be significantly altered