Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Daniela R. Pereira"'
Autor:
D. Nd. Faye, João Salgado Cabaço, João P. Araújo, Daniela R. Pereira, Rodrigo Mateus, Sérgio Ricardo Magalhães, Katharina Lorenz, Marco Peres, Carlos Díaz-Guerra, Eduardo Alves
Publikováno v:
CrystEngComm. 23:2048-2062
The application of conventional Williamson–Hall (WH) plot analysis to crystals often results in broadening not proportional to the scattering length vector. Several reasons may influence the broadening such as composition or strain heterogeneities,
Autor:
J. G. Correia, Carlos Díaz-Guerra, Katharina Lorenz, Eduardo Alves, Marco Peres, Ana G. Silva, José G. Marques, Daniela R. Pereira, Sérgio Ricardo Magalhães
Publikováno v:
Acta Materialia. 199:425-428
Autor:
Ana G. Silva, Susana Cardoso, Carlos Díaz-Guerra, Sérgio Ricardo Magalhães, J. G. Correia, Katharina Lorenz, Paulo P. Freitas, Eduardo Alves, Daniela R. Pereira, Marco Peres, José G. Marques
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 478:290-296
Ion implantation of oxygen in MoO3 lamellar crystals allows tuning their electrical conductivity by defect formation. X-ray diffraction (XRD) is a particularly sensitive technique to study such defects that cause changes in the lattice parameters and
Autor:
Eduardo Alves, Carlos Díaz-Guerra, José G. Marques, J. G. Correia, Ana G. Silva, Sérgio Ricardo Magalhães, Katharina Lorenz, Marco Peres, Daniela R. Pereira
Publikováno v:
Acta Materialia. 169:15-27
α-MoO3 lamellar crystals are implanted with 170 keV oxygen ions at room temperature and with fluences between 1 × 1012 cm−2 and 1 × 1017 cm−2, in order to modify the electrical and structural properties of the crystals. A controllable and sign
Autor:
Luís Alves, J. G. Correia, Carlos Díaz-Guerra, Ana G. Silva, Katharina Lorenz, Marco Peres, Daniela R. Pereira, Eduardo Alves
Publikováno v:
Surface and Coatings Technology. 355:50-54
MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devi