Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Daniel Vanderstraeten"'
Publikováno v:
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
This work concerns the impact of mounting the PCB onto the housing with respect to the reliability of the solder joints of components assembled to this board. Due to the thermal expansion mismatch between the housing and PCB, additional stress is app
Autor:
Eddy Blansaer, Riet Labie, Ralph Lauwaert, Daniel Werkhoven, Davy Pissoort, Daniel Vanderstraeten, Jonas Lannoo, Bart Vandevelde
Publikováno v:
2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
In this work, the solder joint reliability of QFN components is experimentally tested in thermal cycling and four-point bending cycling conditions, and this for three different solder materials: standard SAC305, low Ag SAC alloy and a new low melting
Autor:
A. Ivankovic, Eddy Blansaer, Kris Vanstreels, Renaud Gillon, Daniel Vanderstraeten, Bart Vandevelde, Guy Brizar
Publikováno v:
Microelectronics Reliability. 52:2677-2684
Knowing the Young’s modulus of a plastic molding compound and how it evolves over time and with temperature provides valuable information since it has an important impact on the thermo-mechanical stress that is imposed on a packaged IC. This paper
Autor:
Georg Haberfehlner, Dionyz Pogany, Renaud Gillon, Sergey Bychikhin, Daniel Vanderstraeten, J. Rhayem
Publikováno v:
Microelectronics Reliability. 50:1427-1430
Temperature distribution in diced and packaged DMOS devices subjected to repetitive stress is analyzed using transient interferometric mapping (TIM) technique combined with measurements on diode built-in temperature sensors. The effect of DMOS device
Publikováno v:
Microelectronics Reliability. 44:259-267
Sub-pixel image correlation has been applied to the measurement of surface deformation, in particular to the measurement of thermally induced strain in microchips. A Fourier shift technique coupled with successive approximation is used to determine t
Publikováno v:
ICICDT
Deformations of metal interconnects, cracks in interlayer dielectrics and passivation layers in combination with plastic packaging are still a major reliability concern for integrated circuit power semiconductors. In order to describe and understand
Publikováno v:
2011 IEEE International Conference on IC Design & Technology.
Deformations of metal interconnects, cracks in interlayer dielectrics and passivation layers in combination with plastic-packaging are still a major reliability concern for integrated circuit power semiconductors. In order to describe and understand
Autor:
Eddy Blansaer, A. Ivankovic, Yung-Yu Hsu, Martijn Defloor, Mireia Bargallo Gonzalez, Daniel Vanderstraeten, D. Degryse, K. Vandaele, Renaud Gillon, Kris Vanstreels, Bart Vandevelde, Guy Brizar
Publikováno v:
2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
This paper reports the impact of ageing on the cohesive and adhesive strength of overmould materials used in electronic packages. For so-called harsh environment applications, the overmoulded package operates in an ambient at a continuous temperature
Autor:
Eddy Blansaer, Bart Vandevelde, Andrej Ivankovic, Daniel Vanderstraeten, Guy Brizar, Renaud Gillon, Kris Vanstreels
Publikováno v:
2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE).
This work presents two different methods that offer a faster, easier and more straightforward data analysis methods for Young's modulus extraction of plastic molding compound materials. Both methods are compared and verified with the nano-indentation
Publikováno v:
2008 2nd Electronics Systemintegration Technology Conference.
In this work, flip chip is investigated as an alternative assembly technology for packaging applications requiring driving high electrical currents up to 10A and high IC power dissipation. Currently, automotive applications with components driving (t