Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Daniel Tomaszewski"'
Publikováno v:
Sensors, Vol 24, Iss 12, p 4018 (2024)
A novel design of a MEMS (Micro-Electromechanical System) capacitive accelerometer fabricated by surface micromachining, with a structure enabling precise auto-calibration during operation, is presented. Precise auto-calibration was introduced to ens
Externí odkaz:
https://doaj.org/article/04432a8d6c084f6db55d523370af8c39
Autor:
Tomasz Bieniek, Grzegorz Janczyk, Jerzy Szynka, Piotr Grabiec, Andrzej Kociubiński, Magdalena Ekwińska, Daniel Tomaszewski, Arkadiusz Malinowski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2023)
This paper discusses the multi-domain modeling and simulation issues of the design and analysis of heterogeneous integrated systems. Modeling and simulation method- ology and tools are also discussed.
Externí odkaz:
https://doaj.org/article/b9b59aa693e4405e951e68355af369dc
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
Three sensors for chemical and physical examination of aqueous solutions were presented in the paper. An Au potentiometric electrode, an AgCl chlorine ion sensor and a p-n junction thermometer were developed. Their layout and internal structure were
Externí odkaz:
https://doaj.org/article/c6a7b5108b5b4ea1a85e47a1a17b6e1a
Autor:
Arkadiusz Malinowski, Daniel Tomaszewski, Lidia Łukasiak, Andrzej Jakubowski, Makoto Sekine, Masaru Hori, Michael L. Korwin-Pawlowski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, compos
Externí odkaz:
https://doaj.org/article/a64ad760157b48659e470b85e4c94391
Autor:
Michael Phan, Rishikesh Chavan, Richard Beuttler, Nicole Benipayo, Grace Magedman, David Buchbinder, Daniel Tomaszewski, Sun Yang
Publikováno v:
Clinical and Translational Science, Vol 14, Iss 4, Pp 1303-1313 (2021)
Abstract To identify the clinical and pharmacological risk factors associated with tacrolimus pharmacodynamics for acute graft‐versus‐host disease (aGVHD) in pediatric patients receiving allogeneic hematopoietic stem cell transplantation (HSCT) f
Externí odkaz:
https://doaj.org/article/29d3853d3028414dad7714cae5b6a71a
Publikováno v:
Reproductive Health, Vol 14, Iss 1, Pp 1-7 (2017)
Abstract Background Preconception care, including family planning, is a vital component of healthcare for women of reproductive age. An average female spends the majority of her reproductive life trying to prevent a pregnancy. In order to prevent uni
Externí odkaz:
https://doaj.org/article/0d3c88a4408d4e749bf1939b9fc2d97a
Autor:
Mateusz Barańsk, Maria Sapor, Halina Niemiec, Jacek Marczewski, Krzysztof Kucharski, Wojciech Kucewicz, Andrzej Kociubiński, Bohdan Jaroszewicz, Mirosław Grodner, Krzysztof Domański, Daniel Tomaszewski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-film SOI wafer. Preliminary results of the meas
Externí odkaz:
https://doaj.org/article/1e92ed8034cf4498bd14ed512721edc2
Autor:
Tomasz Dębski, Wolfgang Barth, Ivo W. Rangelow, Krzysztof Domański, Daniel Tomaszewski, Piotr Grabiec, Andrzej Jakubowski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2001)
An important element in microelectronics is the comparison of the modelling and measurements results of the real semiconductor devices. Our paper describes the final results of numerical simulation of a micromechanical process sequence of the atomic
Externí odkaz:
https://doaj.org/article/ba09c4159f234b35a0b7c72a23c8a505
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3-4 (2000)
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated f
Externí odkaz:
https://doaj.org/article/9679ddac726b498e9b183a3abffd45a2
Autor:
Jerzy Katcki, Jacek Ratajczak, Andrzej Jakubowski, Lidia Łukasiak, Daniel Tomaszewski, Jan Gibki
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3-4 (2000)
SOI fabrication process was characterized using electrical and TEM methods. The investigated SOI structures included partially and fully depleted capacitors, gated diodes and transistors fabricated on SIMOX substrates. From C-V and I-V measurements o
Externí odkaz:
https://doaj.org/article/5b00f4314ce5431ea279be394e1f443d