Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Daniel T. Yimam"'
Publikováno v:
Materials science in semiconductor processing, 133(105965). ELSEVIER SCI LTD
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing
Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c65636478c225f1eca636333ed415d1
https://research.rug.nl/en/publications/24567fc9-ee33-4768-857c-0a638b395b9d
https://research.rug.nl/en/publications/24567fc9-ee33-4768-857c-0a638b395b9d
Autor:
Jamo Momand, Sytze de Graaf, Beatriz Noheda, Bart J. Kooi, Daniel T. Yimam, Yingfen Wei, Paul A. Vermeulen, Heng Zhang
Publikováno v:
Acs Nano, 15(2), 2869-2879. AMER CHEMICAL SOC
ACS Nano
ACS Nano
Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b5148e2b9790c6a8ea00778e8749d1e
https://research.rug.nl/en/publications/ffb59c06-e270-45bd-833b-d028a465e8c6
https://research.rug.nl/en/publications/ffb59c06-e270-45bd-833b-d028a465e8c6
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 125(19):193105. AMER INST PHYSICS
Journal of Applied Physics, 125(19):193105. AMER INST PHYSICS
Several design techniques for engineering the visible optical and near-infrared response of a thin film are explored. These designs require optically active and absorbing materials and should be easily grown on a large scale. Switchable chalcogenide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdb7c5aad4871ada4c3a2fc9f8a8fc5e
https://doi.org/10.1063/1.5085715
https://doi.org/10.1063/1.5085715
