Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Daniel T. Pham"'
Autor:
Philip M. Devine, Steven R. Lessard, Daniel B. Hasemann, John. Kiene, Daniel T. Pham, Noah C. Wilde, Garry P. Glaspell, Kyle. Jannak-Huang, Benjamin A. Christie, Weiyu. He, Osama. Ennasr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b25c93c96ac31a391b21151eb715904
https://doi.org/10.21079/11681/35878
https://doi.org/10.21079/11681/35878
Autor:
Maggie Yihong Chen, Xiaochuan Xu, Amir Hosseini, Xuejun Lu, Ray T. Chen, Daniel T. Pham, Harish Subbaraman
Publikováno v:
IEEE Antennas and Wireless Propagation Letters. 12:170-173
In this letter, we present a two-dimensional 2-bit 4 $\,\times\,$ 4 phased-array antenna on a flexible Kapton substrate fabricated using inkjet printing. Printed carbon nanotube thin-film transistors (CNT-TFTs) form the switching elements in the phas
Publikováno v:
American Journal of Roentgenology. 193:W202-W208
OBJECTIVE. The purpose of this article is to show the value of volumetric oblique coronal reformation of CT data sets for assessing the normal anatomy and abnormalities of the ampulla of Vater.CONCLUSION. Volumetric oblique coronal reformations are a
Autor:
Ted R. White, J. Mogab, Marius K. Orlowski, Srikanth B. Samavedam, Leo Mathew, A. Vandooren, J. Schaeffer, Alex Barr, Daniel T. Pham, Bich-Yen Nguyen, S. Egley, Bruce E. White, M. Zavala, J. Conner
Publikováno v:
IEEE Electron Device Letters. 24:342-344
We report for the first time the performance of ultrathin film fully-depleted (FD) silicon-on-insulator (SOI) CMOS transistors using HfO/sub 2/ gate dielectric and TaSiN gate material. The transistors feature 100-150 /spl Aring/ silicon film thicknes
Autor:
Howard P. Forman, Daniel T. Pham, Sandra T. Stein, Arjun Kalyanpur, James A. Brink, Vladimir P. Neklesa
Publikováno v:
Radiology. 232(2)
Although teleradiology is presently being used extensively in the United States-for both overseas subspecialty consultations and overnight coverage of imaging services at domestic medical centers-there has been limited investigation of its potential
Autor:
D. Roan, Marius K. Orlowski, Daniel T. Pham, M. Zavala, Alexander L. Barr, K. Sphabmixay, R. Rai, A. Duvallet, Bich-Yen Nguyen, A. Vandooren, J. Schaeffer, S. Samavedam, M. Huang, Leo Mathew, Tab A. Stephens, Bruce E. White, J. Hughes, Yang Du, Marc A. Rossow, J. Mogab, Dina H. Triyoso, Aaron Thean, S. Egley, I. To, Thuy B. Dao, Ted R. White
Publikováno v:
IEEE International Electron Devices Meeting 2003.
We report for the first time, the digital and analog performance of sub-100nm Fully-Depleted Silicon-On-Insulator (SOI) n and p-MOSFETs using TaSiN gate and HfO/sub 2/ dielectric with elevated Source/Drain (SD) extensions. As CMOS technology continue
Autor:
Leo Mathew, K. Sphabmixay, Alex Barr, J. Schaeffer, S. Murphy, Daniel T. Pham, R. Rai, D. Roan, Bich-Yen Nguyen, I. To, J. Mogab, A. Vandooren, J. Hughes, D. Eades, Dina H. Triyoso, B. Goolsby, Bruce E. White, S. Kalpat, Tab A. Stephens, M. Huang, A. Duvallet, Marc A. Rossow, Ted R. White, M. Zavala, Thuy B. Dao, Yang Du, Aaron Thean, S. Egley
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
In this paper, we report the performance and reliability of sub-100nm TaSiN metal gate fully depleted SOI devices with high-k gate dielectric. Performance differences between fully-depleted and partially-depleted devices are highlighted. This is also
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.