Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Daniel Sobieski"'
Publikováno v:
Advanced Etch Technology for Nanopatterning VIII.
Despite the innumerable advances in EUV lithography for materials, optics, and process in recent years, the N7 and N5 targets for resolution, line roughness, and sensitivity (RLS, collectively) have not simultaneously been achieved from both a yield
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57d3c5a5304c8afc260f2d186bfebca3
https://doi.org/10.1117/12.2518553
https://doi.org/10.1117/12.2518553
Autor:
Brennan Peterson, Michael Kubis, Philippe Leray, Katja Viantka, Salman Mokhlespour, Sandip Halder, Koen van der Straten, Melisa Luca, Nader Shamma, Patrick Jaenen, Daniel Sobieski, Vito Rutigliani, David Hellin, Girish Dixit, Rich Wise, Giordano Cattani
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Continued improvement in pattern fidelity and reduction in total edge placement errors are critical to enable yield and scaling in advanced devices. In this work, we discuss patterning optimization in a combined two-layer process, using ArFi self-ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79c06dcc63c65147683809189f0494a
https://doi.org/10.1117/12.2297401
https://doi.org/10.1117/12.2297401
Autor:
Rich Wise, Samee Ur-Rehman, Mircea Dusa, Christiane Jehoul, Daniel Sobieski, Michael Kubis, Wenzhe Zhang, Geert Simons, Philippe Leray, Katja Viatkina, David Hellin, Patrick Jaenen, Charlotte Chahine
Publikováno v:
SPIE Proceedings.
With shrinking design rules, the overall patterning requirements are getting aggressively tighter and tighter. For the 5-nm node and beyond, on-product overlay below 2.5nm is required. Achieving such performance levels will not only need optimization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c7e3b5c070ac29bd050f32af650e5c
https://doi.org/10.1117/12.2260000
https://doi.org/10.1117/12.2260000
Autor:
David Hellin, Fung Suong Ou, T. Hopf, Efraín Altamirano-Sánchez, Daniel Sobieski, Vassilios Constantoudis, William Clark, Gian Lorusso, Zheng Tao, Anil Gunay-Demirkol, Jean-Luc Everaert
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ff2c8c5f35530d117f57050f66d3a59
https://doi.org/10.1117/2.1201604.006378
https://doi.org/10.1117/2.1201604.006378
Autor:
Charlotte Chahine, Nader Shamma, David Hellin, Johan Vertommen, Michael Kubis, Katja Viatkina, Daniel Sobieski, Benjamin Kam, Philippe Leray, Liesbeth Reijnen, Melisa Luca, Rich Wise, Guillaume Mernier, Mircea Dusa, Patrick Jaenen, Girish Dixit, Jan Mulkens
Publikováno v:
SPIE Proceedings.
With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD unifor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97cca33425eb580c04d63c37bd786fd
https://doi.org/10.1117/12.2220591
https://doi.org/10.1117/12.2220591