Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Daniel S. Koda"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-12 (2024)
Abstract Graphene-covered hexagonal SiC substrates have been frequently discussed to be appropriate starting points for epitaxial overlayers of Xenes, such as plumbene, or even their deposition as intercalates between graphene and SiC. Here, we inves
Externí odkaz:
https://doaj.org/article/a055966b558e416dacf4c39badba4685
Publikováno v:
The Journal of Physical Chemistry C. 121:3862-3869
Stacks of two-dimensional crystals in van der Waals heterostructures pave the way to novel applications in electronics and optoelectronics. Based on first-principles calculations, we study heterobilayers constructed with phosphorene on MoSe2 and WSe2
Publikováno v:
Physical Review B. 100
The use of spatial quantum superpositions of electron states in a gated vdW heterostructure as a charge qubit is presented. We theoretically demonstrate the concept for the ZrSe$_2$/SnSe$_2$ vdW heterostructure using rigorous ab initio calculations.
Publikováno v:
Journal of Electronic Materials. 46:3910-3916
Van der Waals heterostructures have great potential in large-scale integration devices and exploration of new physics. Experimental investigations allow flexible combinations of two-dimensional crystals in device fabrications. Theory, however, has li
Publikováno v:
The Journal of Physical Chemistry C. 120:10895-10908
van der Waals heterostructures provide many novel applications due to a combination of properties. However, their experimental construction and theoretical simulation suffer from the incommensurability of 2D crystals with respect to their symmetry an
Publikováno v:
Physical Review B. 97
Van der Waals (vdW) heterostructures are promising candidates for building blocks in novel electronic and optoelectronic devices with tailored properties, since their electronic action is dominated by the band alignments upon their contact. In this w
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Growth of X-enes, such as silicene, germanene and stanene, requires passivated substrates to ensure the survival of their exotic properties. Using first-principles methods, we study as-grown graphene on polar SiC surfaces as suitable substrates. Tril