Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Daniel Ruiz Aguado"'
Autor:
Mohammed Zahid, Wan-Chih Wang, Valery V. Afanas'ev, Robin Degraeve, Bogdan Govoreanu, Daniel Ruiz Aguado, Jan Van Houdt, Maria Toledano-Luque
Publikováno v:
IEEE Transactions on Electron Devices. 57:2907-2916
The operation and reliability of nonvolatile memory concepts based on charge storage in nitride layers, such as TANOS (TaN/Al2O3/Si3N4/ SiO2/Si), require detailed information on the energy and spatial distribution of the charge defects in both the ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::954e642cd49b4c6749aaef8ef6bd0e5a
https://doi.org/10.1109/ted.2010.2071071
https://doi.org/10.1109/ted.2010.2071071
Autor:
Xue Feng Zheng, Weidong Zhang, Bogdan Govoreanu, Jian Fu Zhang, Daniel Ruiz Aguado, J. Van Houdt
Publikováno v:
IEEE Transactions on Electron Devices. 57:288-296
SiO2/high-? dielectric stacks will soon replace the conventional SiO2-based dielectric stacks in flash memory cells, as the thickness of SiO2 -based stacks is approaching its fundamental limit. The electron trap density in high-? layers is orders of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4d96fb6b505dbf0f62d15e3f1ea01a
https://doi.org/10.1109/ted.2009.2035193
https://doi.org/10.1109/ted.2009.2035193
Autor:
Joeri De Vos, Bogdan Govoreanu, Daniel Ruiz Aguado, Dirk Wellekens, Jan Van Houdt, Aude Rothschild, Malgorzata Jurczak, Jorge Kittl, Pieter Blomme
Publikováno v:
ECS Transactions. 19:649-668
The quest for mass storage and the diversity of end-user applications led to an aggressive scaling of the NAND Flash memory. A key factor to its success is the high density integration potential, which allows fabrication of large memory arrays. Reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3efb0251ca132944d2cdce97e8ecfaf7
https://doi.org/10.1149/1.3122122
https://doi.org/10.1149/1.3122122
Autor:
Luigi Pantisano, Mohammed Zahid, J. Van Houdt, Robin Degraeve, Moonju Cho, Malgorzata Jurczak, Daniel Ruiz Aguado, Guido Groeseneken
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
A Variable T charge -T discharge Amplitude Charge Pumping (VT2ACP) is used to profile defect in the SiO 2 and Al 2 O 3 separately in Flash Memory based devices. It is shown that by independently controlling the pulse low timing “discharging time”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0da015dec99beb15fc7c55ffe945280
https://doi.org/10.1109/irps.2009.5173219
https://doi.org/10.1109/irps.2009.5173219
Publikováno v:
MRS Proceedings. 1071
This work reports on the performance of different Hafmiun aluminate (HfAlOx)-based interpoly dielectrics (IPD) for future sub-45nm nonvolatile memory (NVM) technologies. The impact of the thermal budget during the fabrication process is studied. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a88e870ece2047896477978c80b2b93
https://doi.org/10.1557/proc-1071-f02-05
https://doi.org/10.1557/proc-1071-f02-05
Publikováno v:
2006 European Solid-State Device Research Conference.
Continued shrinkage of floating gate devices requires scaling of the tunnel and/or interpoly dielectrics. This leads to increasing leakage currents that jeopardize the nonvolatile memory retention requirements. High-k materials are natural candidates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08e7206e8dc17abdd358e951211750ec
https://doi.org/10.1109/essder.2006.307724
https://doi.org/10.1109/essder.2006.307724