Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Daniel Ruhstorfer"'
Autor:
Artem Denisov, Anton Bubis, Stanislau Piatrusha, Nadezhda Titova, Albert Nasibulin, Jonathan Becker, Julian Treu, Daniel Ruhstorfer, Gregor Koblmüller, Evgeny Tikhonov, Vadim Khrapai
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1461 (2022)
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them—the charge-mode—being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation
Externí odkaz:
https://doaj.org/article/e6fa32269d6b4328a26004672b3bdb93
Radial (In,Al)GaAs(Sb)-nanowire heterojunctions for optoelectronic devices (Conference Presentation)
Autor:
Tobias Schreitmüller, Daniel Ruhstorfer, Akhil Ajay, Andreas Thurn, Paul Schmiedeke, Jonathan J. Finley, Gregor Koblmüller
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6770d76d14afb8326fcc0b4274cddd95
https://doi.org/10.1117/12.2650414
https://doi.org/10.1117/12.2650414
Publikováno v:
Journal of Applied Physics. 132:204302
We report the effects of Si doping on the growth dynamics and size distribution of entirely catalyst-free GaAs nanowire (NW) arrays grown by selective area molecular beam epitaxy on SiO2-masked Si (111) substrates. Surprising improvements in the NW-a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b4ee2d3c443b99bae4ec98d341ecca2
https://doi.org/10.1063/5.0124808
https://doi.org/10.1063/5.0124808
Autor:
Anna Sitek, Gerhard Abstreiter, Hubert J. Krenner, Daniel Ruhstorfer, Markus Döblinger, D. Rudolph, Lisa Janker, Maximilian M. Sonner, Jonathan J. Finley, Gregor Koblmüller, Andrei Manolescu, Achim Wixforth
Publikováno v:
Nano Letters. 19:3336-3343
We report a comprehensive study of the impact of the structural properties in radial GaAs-Al0.3Ga0.7As nanowire-quantum well heterostructures on the optical recombination dynamics and electrical transport properties, emphasizing particularly the role
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa465815e9dd19a90dfc2dd86273bbbd
https://doi.org/10.1021/acs.nanolett.9b01028
https://doi.org/10.1021/acs.nanolett.9b01028
Autor:
S. U. Piatrusha, J. Treu, N.A. Titova, J. Becker, Gregor Koblmüller, A. V. Bubis, V. S. Khrapai, Albert G. Nasibulin, E. S. Tikhonov, Daniel Ruhstorfer, A O Denisov
Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6187ee20b8faa661d2caa95bc66f85fd
http://arxiv.org/abs/2101.02128
http://arxiv.org/abs/2101.02128
Autor:
L. Suomenniemi, J. Treu, Daniel Ruhstorfer, Markus Döblinger, J. Becker, F. del Giudice, C. de Rose, Jonathan J. Finley, Gregor Koblmüller, H. Riedl
Publikováno v:
Nanoscale. 12(42)
Ultrathin InAs nanowires (NW) with a one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are muc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01b77654a7e7ea71a431df5d6734e86d
https://pubmed.ncbi.nlm.nih.gov/33107547
https://pubmed.ncbi.nlm.nih.gov/33107547
Autor:
Gregor Koblmüller, Daniel Ruhstorfer, Markus Döblinger, Lincoln J. Lauhon, Bernhard Loitsch, Sonja Matich, Nari Jeon
Publikováno v:
Nano Letters. 18:5179-5185
Ternary III-V alloys of tunable bandgap are a foundation for engineering advanced optoelectronic devices based on quantum-confined structures including quantum wells, nanowires, and dots. In this context, core-shell nanowires provide useful geometric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ea8fee027505fc4a9d40815906b1946
https://doi.org/10.1021/acs.nanolett.8b02104
https://doi.org/10.1021/acs.nanolett.8b02104
Autor:
Thomas Stettner, Gregor Koblmüller, Daniel Ruhstorfer, Jochen Bissinger, T. Kostenbader, Michael Kaniber, H. Riedl, Jonathan J. Finley
Publikováno v:
ACS Photonics. 4:2537-2543
Semiconductor nanowire (NW) lasers are nanoscale coherent light sources that exhibit a small footprint, low-threshold lasing characteristics, and properties suitable for monolithic and site-selective integration onto Si photonic circuits. An importan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed394130efe7b3b17e4f8abef273acb
https://doi.org/10.1021/acsphotonics.7b00805
https://doi.org/10.1021/acsphotonics.7b00805
Publikováno v:
2019 Compound Semiconductor Week (CSW).
In vapor-liquid-solid GaAs NWs, doping control has proven to be difficult due to non-uniform incorporation and strong amphoteric behavior of Si dopants in the presence of a liquid droplet catalyst. We present for the first time clear evidence of n-ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d866b8d229fa581718ed0a9174f4deb
https://doi.org/10.1109/iciprm.2019.8819099
https://doi.org/10.1109/iciprm.2019.8819099
Autor:
Thomas Stettner, Paul Schmiedeke, Andreas Thurn, Markus Döblinger, Jochen Bissinger, Sonja Matich, Daniel Ruhstorfer, Hubert Riedl, Jonathan J. Finley, Gregor Koblmueller
Publikováno v:
Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed925df83f011acc468aff2ed443d6c3
https://doi.org/10.1364/cleo_si.2019.sm4j.6
https://doi.org/10.1364/cleo_si.2019.sm4j.6