Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Daniel R. Hulbert"'
Autor:
Aaron J. Weinstein, Matthew D. Reed, Aaron M. Jones, Reed W. Andrews, David Barnes, Jacob Z. Blumoff, Larken E. Euliss, Kevin Eng, Bryan H. Fong, Sieu D. Ha, Daniel R. Hulbert, Clayton A. C. Jackson, Michael Jura, Tyler E. Keating, Joseph Kerckhoff, Andrey A. Kiselev, Justine Matten, Golam Sabbir, Aaron Smith, Jeffrey Wright, Matthew T. Rakher, Thaddeus D. Ladd, Matthew G. Borselli
Quantum computation features known examples of hardware acceleration for certain problems, but is challenging to realize because of its susceptibility to small errors from noise or imperfect control. The principles of fault tolerance may enable compu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4bc6f1bfb730c079a3c6b6293cb6d44
http://arxiv.org/abs/2202.03605
http://arxiv.org/abs/2202.03605
Autor:
Michael P. Jura, James M. Chappell, Edwin Acuna, Tower S. Adams, Adele E. Schmitz, Yan Tang, Matthew Borselli, Ramsey Noah, Sieu D. Ha, Kangmu Lee, Maxwell D. Choi, Matthew T. Rakher, Wonill Ha, Daniel R. Hulbert, Justine W. Matten, J. A. Wright, Mark Levendorf
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a75f71d967d6b2a01a51102629a8818
http://arxiv.org/abs/2107.10916
http://arxiv.org/abs/2107.10916
Autor:
Matthew T. Rakher, Michael P. Jura, Edward H. Chen, Richard S. Ross, Matthew Borselli, Clayton A. Jackson, Maxwell D. Choi, Kate Raach, Jacob Z. Blumoff, Tyler E. Keating, Daniel R. Hulbert, Andrew Pan, Bo Sun, Wonill Ha, Edwin Acuna, Ramsey Noah, T. Brecht, Bryan J. Thomas, Andrey A. Kiselev
Publikováno v:
Physical Review Applied. 15
Silicon-quantum-dot qubits must contend with low-lying valley excited states that are sensitive functions of the quantum-well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device perfo