Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Daniel R, Ward"'
Autor:
Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-4 (2022)
Externí odkaz:
https://doaj.org/article/ce1361f46f8440b68b7370a38f0279ac
Autor:
Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Spin-orbit coupling in gate-defined quantum dots in silicon metal-oxide semiconductors provides a promising route for electrical control of spin qubits. Here, the authors demonstrate that intervalley spin–orbit interaction enables fast singlet–tr
Externí odkaz:
https://doaj.org/article/86e100879aa34965a9c75ae65b4b0006
Autor:
Quinn T. Campbell, Justine C. Koepke, Jeffrey A. Ivie, Andrew M. Mounce, Daniel R. Ward, Malcolm S. Carroll, Shashank Misra, Andrew D. Baczewski, Ezra Bussmann
Publikováno v:
The Journal of Physical Chemistry C. 127:6071-6079
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21ffae6aa29522432201747c00e426cc
https://doi.org/10.1021/acs.jpcc.3c00479
https://doi.org/10.1021/acs.jpcc.3c00479
Autor:
Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
Publikováno v:
npj Quantum Information, Vol 3, Iss 1, Pp 1-4 (2017)
Quantum information: improving semiconducting qubit performance Researchers in the United States demonstrate high tunability of spin qubits in silicon-based quantum dots. Mark Eriksson at the University of Wisconsin-Madison and colleagues have achiev
Externí odkaz:
https://doaj.org/article/284840a83ca14817b7e3faf2377e1e7c
Autor:
Xiao Xue, Benjamin D’Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen
Publikováno v:
Physical Review X, Vol 10, Iss 2, p 021006 (2020)
Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step toward the implementation of quantum error-correcting codes, quantum nondemolition measurements are needed to efficiently detect the state of
Externí odkaz:
https://doaj.org/article/c88ad33df83a47e9a5ea593e177e113a
Autor:
Ting S. Luk, Michael T. Marshall, Evan M. Anderson, Paul G. Kotula, Ping Lu, Tzu-Ming Lu, Daniel R. Ward, Steve M. Young, DeAnna M. Campbell, Shashank Misra, Aaron M. Katzenmeyer, Ezra Bussmann, Peter Q. Liu, James Anthony Ohlhausen
Publikováno v:
Journal of Materials Research. 35:2098-2105
Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic elli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::007cc3b50f26b8bb0794c5c83a5acf4c
https://doi.org/10.1557/jmr.2020.155
https://doi.org/10.1557/jmr.2020.155
Autor:
Justin Koepke, Richard P. Muller, Quinn Campbell, Jeffrey A. Ivie, Malcolm S. Carroll, Peter A. Schultz, Shashank Misra, Daniel R. Ward, Andrew Baczewski, Andrew Mounce, Mitchell Brickson, Ezra Bussmann
Publikováno v:
Physical Review Applied. 16
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a $\mathrm{Si}$ lattice within approximately $1$ nm of a target position. This exquisite precision is promising f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05fe295b92e6cef0395a8946f6274c34
https://doi.org/10.1103/physrevapplied.16.054037
https://doi.org/10.1103/physrevapplied.16.054037
Autor:
Connor Halsey, Jessica Depoy, DeAnna M. Campbell, Daniel R. Ward, Evan M. Anderson, Scott W. Schmucker, Jeffrey A. Ivie, Xujiao Gao, David A. Scrymgeour, Shashank Misra
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a693a840899f26d639a6dc8afd049fea
http://arxiv.org/abs/2110.11580
http://arxiv.org/abs/2110.11580
Autor:
James Anthony Ohlhausen, Ting S. Luk, Daniel R. Ward, Michael T. Marshall, Paul G. Kotula, Tzu-Ming Lu, Aaron M. Katzenmeyer, Evan M. Anderson, Ping Lu, Ezra Bussmann, DeAnna M. Campbell, Shashank Misra
Publikováno v:
ECS Transactions. 93:37-40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c52ca24e64e8bcca47dfae4ee0b3ad73
https://doi.org/10.1149/09301.0037ecst
https://doi.org/10.1149/09301.0037ecst
Autor:
Jeffrey A. Ivie, Sanja Dmitrovic, Aaron M. Katzenmeyer, DeAnna M. Campbell, Scott W. Schmucker, Shashank Misra, Evan M. Anderson, David Scrymgeour, Andrew Baczewski, George T. Wang, Ezra Bussmann, Daniel R. Ward, Tzu-Ming Lu, Quinn Campbell
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7439cc8b0cca130f778a69914c561096
https://doi.org/10.1117/1.jmm.20.1.014901
https://doi.org/10.1117/1.jmm.20.1.014901