Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Daniel Queen"'
Specific heat measurements of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large density of two-level systems at low temperature. Annealing at 200 {\deg}C, well below the growth temperature, does not significan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47c1d47c4d3fb6a8304ff3cea58332e4
Autor:
Daniel Queen, McDonald Robinson, Cameron Kopas, B. Wagner, Justin Gonzales, James Huffman, Shengke Zhang, Nathan Newman
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095007-095007-5 (2021)
In this study, we show that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at single-photon powers and sub-Kelvin temperatures (≈40 mK). This low loss enables their use in a wide range of devices, including coplanar, mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::110e13fbc4a3c5f4cce9b8cfc0d22cc1
https://doi.org/10.1063/5.0041525
https://doi.org/10.1063/5.0041525
Publikováno v:
Materials Research Express, vol 7, iss 9
Molina-Ruiz, M; Jacks, HC; Queen, DR; Wang, Q; Crandall, RS; & Hellman, F. (2018). Two-level systems and growth-induced metastability in hydrogenated amorphous silicon. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/3t39x2vp
Molina-Ruiz, M; Jacks, HC; Queen, DR; Wang, Q; Crandall, RS; & Hellman, F. (2018). Two-level systems and growth-induced metastability in hydrogenated amorphous silicon. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/3t39x2vp
Specific heat measurements from 2 to 300 K of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large excess specific heat at low temperature, significantly larger than the Debye specific heat calculated from the so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4e00e2657016abbdad6851c98b3c122
http://arxiv.org/abs/1809.07908
http://arxiv.org/abs/1809.07908
Autor:
Battogtokh Jugdersuren, Rhonda M. Stroud, Xiao Liu, Qi Wang, Paul A. DeSario, Brian Kearney, James C. Culbertson, William Nemeth, Daniel Queen, Thomas Metcalf
Publikováno v:
Journal of Physics: Condensed Matter. 30:085301
We have measured the thermal conductivity of amorphous and nanocrystalline silicon films with varying crystalline content from 85 K to room temperature. The films were prepared by the hot-wire chemical-vapor deposition, where the crystalline volume f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fcb2a92b4d8b33840633d2ec17924d0
https://doi.org/10.1088/1361-648x/aaa43f
https://doi.org/10.1088/1361-648x/aaa43f
Autor:
Julie Karel, Daniel Queen, Frances Hellman, Thomas Metcalf, Qi Wang, Xiao Liu, Richard S. Crandall
Publikováno v:
EPL (Europhysics Letters), vol 112, iss 2
Queen, DR; Liu, X; Karel, J; Wang, Q; Crandall, RS; Metcalf, TH; et al.(2015). Light-induced metastability in pure and hydrogenated amorphous silicon. EPL, 112(2). doi: 10.1209/0295-5075/112/26001. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/0df7c490
EPL, vol 112, iss 2
Queen, DR; Liu, X; Karel, J; Wang, Q; Crandall, RS; Metcalf, TH; et al.(2015). Light-induced metastability in pure and hydrogenated amorphous silicon. EPL, 112(2). doi: 10.1209/0295-5075/112/26001. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/0df7c490
EPL, vol 112, iss 2
Author(s): Queen, DR; Liu, X; Karel, J; Wang, Q; Crandall, RS; Metcalf, TH; Hellman, F | Abstract: Light soaking is found to increase the specific heat C and internal friction Q−1 of pure (a-Si) and hydrogenated (a-Si:H) amorphous silicon. At the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::febb4a00273350975cc9832f5218a962
https://escholarship.org/uc/item/0df7c490
https://escholarship.org/uc/item/0df7c490
Publikováno v:
Queen, DR; Liu, X; Karel, J; Jacks, HC; Metcalf, TH; & Hellman, F. (2015). Two-level systems in evaporated amorphous silicon. Journal of Non-Crystalline Solids, 426, 19-24. doi: 10.1016/j.jnoncrysol.2015.06.020. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/0p80z87j
© 2015 Elsevier B.V. All rights reserved. In e-beam evaporated amorphous silicon (a-Si), the densities of two-level systems (TLS), n0 and P¯, determined from specific heat C and internal friction Q- 1 measurements, respectively, have been shown to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4b721c9b66c07cc1f86c4e170447ce9
https://escholarship.org/uc/item/0p80z87j
https://escholarship.org/uc/item/0p80z87j
Publikováno v:
Archives of Metallurgy and Materials, vol 60, iss 1
Archives of Metallurgy and Materials, Vol 60, Iss 1, Pp 359-363 (2015)
Liu, X; Queen, DR; Metcalf, TH; Karel, JE; & Hellman, F. (2015). Amorphous dielectric thin films with extremely low mechanical loss. Archives of Metallurgy and Materials, 60(1), 359-363. doi: 10.1515/amm-2015-0059. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/7457s2s3
Archives of Metallurgy and Materials, Vol 60, Iss 1, Pp 359-363 (2015)
Liu, X; Queen, DR; Metcalf, TH; Karel, JE; & Hellman, F. (2015). Amorphous dielectric thin films with extremely low mechanical loss. Archives of Metallurgy and Materials, 60(1), 359-363. doi: 10.1515/amm-2015-0059. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/7457s2s3
The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::671ac0cb859bb9dd1c0ffca5b0cd2430
https://escholarship.org/uc/item/7457s2s3
https://escholarship.org/uc/item/7457s2s3
Publikováno v:
32nd European Physical Society Conference on Plasma Physics and Controlled Fusion combined with the 8th International Workshop on Fast Ignition of Fusion Targets
ECA
ECA
The prototype of a radiation hard resistive bolometer has been produced. This prototype bolometer was installed in ASDEX Upgrade to test its viability and long term stability in a tokamak environment.The prototype bolometer with platinum meanders and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be33891516ddec81457f12561067f450
https://doi.org/10.1088/0741-3335/47/12/004
https://doi.org/10.1088/0741-3335/47/12/004
Publikováno v:
Liu, X; Queen, DR; Metcalf, TH; Karel, JE; & Hellman, F. (2014). Hydrogen-free amorphous silicon with no tunneling states. Physical Review Letters, 113(2). doi: 10.1103/PhysRevLett.113.025503. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/5x94b30n
Physical review letters, vol 113, iss 2
Physical review letters, vol 113, iss 2
The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are one of the universal phenomena of amorphous solids. Low temperature elastic measurements show that e-beam amorphous silicon (a-Si) contains a variable density of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ece9ceddb18cf3296817e344c3fd7fb5
http://www.escholarship.org/uc/item/5x94b30n
http://www.escholarship.org/uc/item/5x94b30n
Publikováno v:
Physical Review Letters. 84:5411-5414
Magnetization measurements of giant negative magnetoresistive amorphous GdxSi1-x ( 0.04
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5337373b0dd3b38d22ee0735e33585dd
https://doi.org/10.1103/physrevlett.84.5411
https://doi.org/10.1103/physrevlett.84.5411