Efficient Programmable Pulse Shaping for $X$ -Band GaN MMIC Radar Power Amplifiers

Autor: Daniel Niessen, Corrado Florian, Tommaso Cappello, Scott Schafer, Rudi Paolo Paganelli, Zoya Popovic

Publikováno v: Florian, C, Cappello, T, Niessen, D, Paganelli, R P, Schafer, S & Popović, Z 2017, ' Efficient Programmable Pulse Shaping for X-Band GaN MMIC Radar Power Amplifiers ', IEEE Transactions on Microwave Theory and Techniques, vol. 65, no. 3, pp. 881-891 . https://doi.org/10.1109/TMTT.2016.2631171
IEEE transactions on microwave theory and techniques 65 (2017): 881–891. doi:10.1109/TMTT.2016.2631171
info:cnr-pdr/source/autori:Corrado Florian; Tommaso Cappello; Daniel Niessen; Rudi Paolo Paganelli; Scott Schafer; Zoya Popovic/titolo:Efficient Programmable Pulse Shaping for X-band GaN MMIC Radar Power Amplifiers/doi:10.1109%2FTMTT.2016.2631171/rivista:IEEE transactions on microwave theory and techniques/anno:2017/pagina_da:881/pagina_a:891/intervallo_pagine:881–891/volume:65

This paper presents a supply modulated $X$ -band 12-W peak power transmitter that maintains an average efficiency greater than 50% for various shapes of amplitude-modulated pulses. The main power amplifier is a two-stage GaN-on-SiC MMIC with a peak e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70c85992b424a526cb04996ce365af5b
https://doi.org/10.1109/tmtt.2016.2631171

GaN FET Nonlinear Modeling Based on Double Pulse ${ I}/{ V}$ Characteristics

Autor: Rafael Cignani, Fabio Filicori, Dominique Schreurs, Alberto Santarelli, Daniel Niessen, Gian Piero Gibiino, Pier Andrea Traverso, Corrado Florian

Publikováno v: IEEE Transactions on Microwave Theory and Techniques. 62:3262-3273

A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are deal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06ee86fb9cbebbb07a1d5e09f341e639
https://doi.org/10.1109/tmtt.2014.2364236

A double-pulse technique for the dynamic I/V characterization of GaN FETs

Autor: Dominique Schreurs, Fabio Filicori, Rafael Cignani, Gian Piero Gibiino, Daniel Niessen, Pier Andrea Traverso, Corrado Florian, Alberto Santarelli

Publikováno v: IEEE microwave and wireless components letters 24 (2014): 132–134. doi:10.1109/LMWC.2013.2290216
info:cnr-pdr/source/autori:Santarelli A.; Cignani R.; Gibiino G.P.; Niessen D.; Traverso P.A.; Florian C.; Schreurs D.M.M.-P.; Filicori F./titolo:A double-pulse technique for the dynamic I%2FV characterization of GaN FETs/doi:10.1109%2FLMWC.2013.2290216/rivista:IEEE microwave and wireless components letters/anno:2014/pagina_da:132/pagina_a:134/intervallo_pagine:132–134/volume:24

Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46a76396f95894471ebbb973c49bb0d6
http://www.scopus.com/inward/record.url?eid=2-s2.0-84896710562&partnerID=q2rCbXpz

Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements

Autor: Dominique Schreurs, Rafael Cignani, Daniel Niessen, Gian Piero Gibiino, Alberto Santarelli, Fabio Filicori

We propose an efficient procedure for the extraction of a charge-controlled nonlinear model of a 1-mm gallium nitride on silicon carbide field-effect transistor ( $L = 0.25~\mu \text{m}$ ) from nonlinear vector network analyzer acquisitions. A fast,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::becd9c527ffd1b2214cc118c4b3be4c2
http://hdl.handle.net/11585/585867

Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement

Autor: Fabio Filicori, Rafael Cignani, Dominique Schreurs, Gian Piero Gibiino, Alberto Santarelli, Daniel Niessen

A fast and simple method for the direct characterization of nonlinear charge functions of electron devices is presented. The input and output transistor ports are simultaneously excited through single-tone sources at different frequencies and calibra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::086df58a31cacaa5521e0e30c78977ed
http://hdl.handle.net/11585/568206