Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Daniel Nagy"'
Autor:
Daniel Nagy, Gabriel Espineira, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Access, Vol 8, Pp 53196-53202 (2020)
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte Carlo simulation toolbo
Externí odkaz:
https://doaj.org/article/a31dac95596644cb9af7c7247f5ee306
Autor:
Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Access, Vol 7, Pp 12790-12797 (2019)
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device designs. Quantum corrected (Q
Externí odkaz:
https://doaj.org/article/333d34e54e304286a6e662d115e50c35
Autor:
Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema, Ali Rezaei, Daniel Nagy, Vihar P. Georgiev, Asen Asenov
Publikováno v:
Journal of Microelectronic Manufacturing, Vol 3, Iss 4 (2020)
This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow. NESS is designed with t
Externí odkaz:
https://doaj.org/article/ce578e13f3264249a19958a69d0ecec8
Autor:
Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 332-340 (2018)
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW
Externí odkaz:
https://doaj.org/article/edf10bca70f14f7dbb5c1f513b0fb80b
Autor:
Cristina Medina-Bailon, Tapas Dutta, Ali Rezaei, Daniel Nagy, Fikru Adamu-Lema, Vihar P. Georgiev, Asen Asenov
Publikováno v:
Micromachines, Vol 12, Iss 6, p 680 (2021)
The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD
Externí odkaz:
https://doaj.org/article/8a1f6fb8325b4daa83fbed61b0443787
Autor:
Rosaria Villari, Daniel NAgy, Luciano Bertalot, Andrea Colangeli, Davide Flammini, Nicola Fonnesu, Giovanni Mariano, Fabio Moro, Eduard Polunovskiy
Publikováno v:
IEEE Transactions on Plasma Science. 50:4533-4538
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f7a0e431fe546bbc4a6c27abef8b83
https://doi.org/10.1109/tps.2022.3184338
https://doi.org/10.1109/tps.2022.3184338
Autor:
Zoltán Kovács-Krausz, Dániel Nagy, Albin Márffy, Bogdan Karpiak, Zoltán Tajkov, László Oroszlány, János Koltai, Péter Nemes-Incze, Saroj P. Dash, Péter Makk, Szabolcs Csonka, Endre Tóvári
Publikováno v:
npj Quantum Materials, Vol 9, Iss 1, Pp 1-8 (2024)
Abstract The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We e
Externí odkaz:
https://doaj.org/article/5509ac6ce1534663b03ba8d6a6ec680f
Autor:
Gabor Daniel Nagy
Publikováno v:
Open Journal of Philosophy. 12:682-686
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d242dc5efd5e44704dd3f6d97cb3de1
https://doi.org/10.4236/ojpp.2022.124046
https://doi.org/10.4236/ojpp.2022.124046
Autor:
Gitta Schlosser, László A. Kiss, Tamás R. Varga, Mihály V. Pilipecz, Péter Nemes, Anna Alekszi-Kaszás, Daniel Nagy, András Simon
Publikováno v:
Synthetic Communications. :1-7
The preparation of representatively selected 2-aryl-4,5-disubstituted-1,2,4-triazol-3-ones from cyclic β-nitroenamines in four steps is provided, with an overall yield of 8–70%. The nitrazone to am...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0590afbf1126059f1af237367d62774
https://doi.org/10.1080/00397911.2021.1913504
https://doi.org/10.1080/00397911.2021.1913504
Autor:
Daniel Nagy, Ali Rezaei, Nikolas Xeni, Tapas Dutta, Fikru Adamu-Lema, Ismail Topaloglu, Vihar P. Georgiev, Asen Asenov
Publikováno v:
Solid-State Electronics. 199:108489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7ae25c3b03074172e60c4c254e98b92
https://doi.org/10.1016/j.sse.2022.108489
https://doi.org/10.1016/j.sse.2022.108489