Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Daniel Mauch"'
Publikováno v:
Radio Science. 53:496-508
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e956cfeccef6b1c0827dda8b53ffb11
https://doi.org/10.1002/2017rs006484
https://doi.org/10.1002/2017rs006484
Autor:
Vincent Meyers, Sergey A. Nikishin, Matthew Gaddy, Vladimir Kuryatkov, Andreas A. Neuber, Daniel Mauch, James C. Dickens
Publikováno v:
MRS Advances. 3:179-184
Characterization of three vendor’s bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: scanning electron microscopy, secondary ion mass spectroscopy, high resolution X-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::473b505426f7583cbe2efc3e9100bc22
https://doi.org/10.1557/adv.2018.234
https://doi.org/10.1557/adv.2018.234
Autor:
I. C. Kizilyalli, M. P. King, Fred J. Zutavern, Jason C. Neely, Daniel Mauch, Robert Kaplar, Jarod James Delhotal
Publikováno v:
IEEE Transactions on Power Electronics. 32:9333-9341
A system is presented that is capable of measuring subnanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29529025eb9e66223b24b26fc7c29afd
https://doi.org/10.1109/tpel.2017.2657491
https://doi.org/10.1109/tpel.2017.2657491
Publikováno v:
IEEE Transactions on Electron Devices. :1-6
We focus on a simulation study to probe the mitigation of electric fields, especially at the edges of metal contacts to SiC-based photoconductive switches. Field reduction becomes germane given that field-induced failures near contacts have been repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::004ed0420689476d15d0519015fca54f
https://doi.org/10.1109/ted.2016.2577547
https://doi.org/10.1109/ted.2016.2577547
Publikováno v:
IEEE Transactions on Plasma Science. 43:2182-2186
The power output, forward voltage, conversion efficiency, and spectral characteristics of a 365 nm ultraviolet light-emitting diode (LED) were measured for applications of triggering wide-bandgap photoconductive switches for pulsed power applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d555f664a264302c14e41b11b3887deb
https://doi.org/10.1109/tps.2015.2435744
https://doi.org/10.1109/tps.2015.2435744
Publikováno v:
Journal of Electronic Materials. 44:1300-1305
Photoconductive semiconductor switches (PCSS) fabricated on high-purity semi-insulating 4H-SiC substrates (000\( \bar{1} \)) are capable of switching high currents in compact packages with long device lifetimes. A heavily doped n-type SiC epitaxial l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92bedf02fbdb30240156ad02f279fd6
https://doi.org/10.1007/s11664-015-3658-z
https://doi.org/10.1007/s11664-015-3658-z
Autor:
Richard Ness, James C. Dickens, Sergey A. Nikishin, Andreas A. Neuber, Vincent Meyers, Daniel Mauch, Vladimir Kuryatkov
Publikováno v:
2017 IEEE 21st International Conference on Pulsed Power (PPC).
Photoconductive semiconductor switches (PCSS) made from bulk, semi-insulating GaN have been fabricated and tested under pulse-charged conditions. Switching response and photocurrent efficiency of GaN PCSSs triggered by sub-10 ns, 355 nm laser pulses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351b928e0e491c1d8ae3613c4ebf683e
https://doi.org/10.1109/ppc.2017.8291269
https://doi.org/10.1109/ppc.2017.8291269
Publikováno v:
2017 IEEE 21st International Conference on Pulsed Power (PPC).
Intensity-dependent nonlinear light absorption in bulk 4H-SiC at the above-bandgap energy of 3.49 eV (λ = 355 nm) is studied. Characterization and understanding of such nonlinear optical behavior in 4H-SiC forms the basis efficiency improvements and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b30d698cd430da8b4e9390f068828d
https://doi.org/10.1109/ppc.2017.8291268
https://doi.org/10.1109/ppc.2017.8291268
Publikováno v:
2017 IEEE International Conference on Plasma Science (ICOPS).
A very compact system integrating a high voltage pulser (up to 250 V) and high power UV LED (365 nm wavelength) was developed for triggering SiC photoconductive semiconductor switches (PCSS). The relationships between LED drive current and forward vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a48df009ee267aa7bb92e9b805852cb1
https://doi.org/10.1109/plasma.2017.8496006
https://doi.org/10.1109/plasma.2017.8496006
Publikováno v:
2017 IEEE International Conference on Plasma Science (ICOPS).
Results detailing the current handling capability of Gold bond wires (1 mil diameter), and Aluminum ribbon (1mil x 10 mil) under pulsed conditions are presented. Gold wire bonds were formed through the ball-bonding technique, and the Aluminum wire wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33228fa3edfb93ec86cd44bbe483aaaa
https://doi.org/10.1109/plasma.2017.8496332
https://doi.org/10.1109/plasma.2017.8496332