Výsledky vyhledávání - "Daniel Mathiot"

Autor: Rémi Demoulin, Philippe Pareige, Daniel Mathiot, Dominique Muller, Etienne Talbot

Publikováno v: physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2020, 14 (6), pp.2000107. ⟨10.1002/pssr.202000107⟩
physica status solidi (RRL)-Rapid Research Letters, 2020, 14 (6), pp.2000107. ⟨10.1002/pssr.202000107⟩

International audience; Structural characteristics and luminescence properties of B-doped silicon nanocrystals (Si-ncs) embedded in a SiO2 matrix elaborated by ion beam synthesis are investigated. The use of atom probe tomography gives a unique oppor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::313d2e30023ca2cc424fa9bc4ecff03b
https://hal.archives-ouvertes.fr/hal-03329836/document

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Ion Beam Synthesis of Doped Nanocrystals of Si1-xGex Alloys Embedded in SiO2

Autor: A. Chelouche, Dominique Muller, Guy Schmerber, Daniel Mathiot, G. Ferblantier

Publikováno v: MRS Advances. 2:975-980

As an extension of our previous proving that ion beam synthesis is an efficient route to form doped silicon nanocrystals (nc’s) [1, 2], we show here that ion beam synthesis, by co-implantion of the dopant and of the constituents of the alloy, follo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de6b753536e07590facdcb2c8f16c09d
https://doi.org/10.1557/adv.2017.38

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Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2

Autor: Philippe Pareige, Daniel Mathiot, Etienne Talbot, Dominique Muller, Manuel Roussel, Rémi Demoulin, Sébastien Duguay

Publikováno v: Microscopy & Microanalysis 2019
Microscopy & Microanalysis 2019, Aug 2019, Portland, United States. pp.2540-2541, ⟨10.1017/S1431927619013436⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b320e2ff1306c2a27a0402ce4b552df0
https://normandie-univ.hal.science/hal-02294165

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Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Autor: Rémi Demoulin, Dominique Muller, Philippe Pareige, Etienne Talbot, Manuel Roussel, Sébastien Duguay, Daniel Mathiot

Publikováno v: Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩
Journal of Physical Chemistry C, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩

International audience; Structural properties of undoped, As-doped, and P-doped silicon nanocrystals (Si-Ncs) embedded in a SiO 2 matrix have been investigated using atom probe tomography. It turns out that both As and P atomic distributions have the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::317bd997369342f171b7e29bc817b6bd
https://hal-normandie-univ.archives-ouvertes.fr/hal-02082140

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Silicon and silicon-germanium nanoparticles obtained by Pulsed Laser Deposition

Autor: F. Stock, Pierre Pfeiffer, Daniel Mathiot, S. Roques, Thibault Haffner, F. Antoni, L. Diebold, Chinmayee Chowde Gowda, Dominique Muller

Publikováno v: Applied Surface Science
Applied Surface Science, Elsevier, 2019, 466, pp.375-380
Applied Surface Science, 2019, 466, pp.375-380

Semiconductor nanoparticles are of great interest in the area of microelectronics and can also be used in many optoelectrical devices as for example optical converters for photovoltaic applications. Silicon (Si) and silicon-germanium (SiGe) quantum d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::456ea644610866be2cc7327ca4e305cf
https://hal.univ-grenoble-alpes.fr/hal-01947783

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(Invited) Fabrication and Characterization of B- or P- Doped Silicon Nanoparticles Embedded in SiOxNy Transparent Matrix

Autor: Yann Le Gall, Dominique Muller, G. Ferblantier, Fabien Ehrhardt, Daniel Mathiot

Publikováno v: ECS Meeting Abstracts. :1059-1059

Silicon nanocrystals (Si-Ncs)-based devices are some of the most studied nanomaterials and could be of great interest in many fields such as electronics1, optical sensing2, photovoltaics3 and biomedicine4. First of all, it is important to control the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::628f92847c8f67d45e4aeb54fbfb863d
https://doi.org/10.1149/ma2020-01161059mtgabs

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Integration of InGaAs/InP structure above ROIC-CMOS for SWIR imaging

Autor: Jean-Luc Reverchon, Daniel Mathiot, Jean Decobert, Florian Le Goff, O. Parillaud, Jean-Pierre Le Goec

Publikováno v: 2017 75th Annual Device Research Conference (DRC).

Nowadays short wavelength infrared (SWIR) imaging based on InP/InGaAs photo-diodes is quite popular for uncooled camera. The state of the art technology is a double layer planar heterointerface focal plane array [1]. But, it remains expensive and onl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8c50b08a9df06cdb09cd7de6eb7c9be5
https://doi.org/10.1109/drc.2017.7999458

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Plasmonic properties of implanted Ag nanoparticles in SiO2 thin layer by spectroscopic ellipsometry

Autor: Daniel Mathiot, Marzia Carrada, Yann Le Gall, Dominique Muller, Yann Battie, Aotmane En Naciri, N. Chaoui

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2017, 122 (8), pp.085308. ⟨10.1063/1.4989793⟩
Journal of Applied Physics, American Institute of Physics, 2017, 122 (8), pp.085308. ⟨10.1063/1.4989793⟩

International audience; We report an uncommon study of the insertion of distributions of both volume fraction and depolarization factors in the modeling of the plasmonic properties of implanted Ag nanoparticles (Ag-NPs) in a SiO2 layer when using spe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a79a1a495b4a3d61439b8586deaf854
https://hal.science/hal-01755345

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Influence of doping on the optical properties of silicon nanocrystals embedded in SiO 2

Autor: Rim Khelifi, Mathieu Frégnaux, Dominique Muller, Yann Le Gall, Daniel Mathiot

Publikováno v: physica status solidi c. 12:80-83

Co-implantation, with overlapping implantation projected ranges, of Si and doping species (P, As, B) followed by a thermal annealing step is a viable route to form doped Si nanocrystals (NCs) embedded in SiO2. This presentation deals with optical cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a500a12e16ecb4fded246428f5ff105
https://doi.org/10.1002/pssc.201400079

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Ion beam synthesis of embedded III‐As nanocrystals in silicon substrate

Autor: Yann Le Gall, Rim Khelifi, Guy Schmerber, Dominique Muller, Daniel Mathiot, Mathieu Frégnaux

Publikováno v: physica status solidi c. 12:55-59

Our goal is to use the versatility of ion beam synthesis to grow nanocrystals of InxGa1-xAs alloys embedded in a silicon substrate. We study, first, the annealing conditions necessary to grow well defined InAs and GaAs binary nanocrystals. High dose

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cea4db1e9f83c44e54f09aa1384190ef
https://doi.org/10.1002/pssc.201400107

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