Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Daniel L. Meier"'
Publikováno v:
IEEE Journal of Photovoltaics. 10:1604-1613
Contact resistivity ( ρc ) for silicon solar cells is often measured using a pseudo-TLM pattern of equally spaced gridlines, which is cut from the cell itself. In this measurement, the uncontacted (floating) gridlines between two contacted gridlines
Autor:
Vijay Yelundur, H. Preston Davis, Ajeet Rohatgi, Adam M. Payne, Daniel L. Meier, Vinodh Chandrasekaran
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
A simple process is defined and executed to achieve 20% efficiency for cells fabricated on 156 mm n-Cz Si wafers. The cell structure is n+np+ with the p+ emitter being formed over most of the rear surface by Al alloying, but extended to the wafer edg
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
A Cu tape was developed and tested for use as a backside busbar for any silicon solar cell having a screen-printed and fired Al backside, particularly the Al BSF cell and the PERC cell. A key element of the tape is the adhesive which penetrates throu
Autor:
Daniel L. Meier
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
Overall, the solar lighting system is aesthetically pleasing and it performed well during its first 200 days of operation. The illuminated sign was easily visible at night and the outdoor system withstood severe weather conditions: temperatures down
Autor:
Toru Abe, Edgar L. Kochka, Preston Davis, Satoshi Yamanaka, John R. Easoz, Jalal Salami, Akio Shibata, Daniel L. Meier, Kazuo Kinoshita
Publikováno v:
Solar Energy Materials and Solar Cells. 48:159-165
This paper presents, for the first time, a low-cost, high-throughput manufacturing approach for fabricating n-base dendritic web silicon solar cells with selectively doped emitters and self-aligned aluminum contacts using rapid thermal processing (RT
Autor:
Sheri Wang, Vinodh Chandrasekaran, H. Preston Davis, Young-Woo Ok, Daniel L. Meier, Adam M. Payne, Cedric A. Davis, Francesco Zimbardi, Ajeet Rohatgi, Jon E. O'Neill
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
This paper describes ion-implanted, screen-printed, high efficiency, stable, n-base silicon cells fabricated from readily available 156 mm n-Cz wafers, along with prototype modules assembled from such cells. Two approaches are described. The first ap
Publikováno v:
Numerical Simulation of Optoelectronic Devices.
A two dimensional numerical model for silicon solar cells has been developed in COMSOL. This model calculates the influence of emitter doping profile, sheet resistance, and recombination on the performance of the solar cell in two dimensions. The sol
Autor:
Vinodh Chandrasekaran, Karl A. Littau, Preston Davis, Daniel L. Meier, Baomin Xu, Jim Zesch, K. Rapolu, Adam M. Payne
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
We have fabricated solar cells using a standard POCl 3 process along with a PECVD SiN x AR coating. In particular, we have also used a self-doping paste with belt furnace firing in conjunction with laser ablation to remove the silicon nitride passiva
Autor:
Daniel L. Meier, Hao-Chih Yuan, Howard M. Branz, L. Roybal, Bobby To, Matthew Page, Paul Stradins, Vernon E. Yost
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
We fabricated black silicon solar cells with conversion efficiency of 16.8% on p-type single crystal Si wafers with a conventional diffused emitter and Al back-surface field (BSF). We replaced the anti-reflection coating step with a single 3-minute
Autor:
Hao-Chih Yuan, Y. Xu, Daniel L. Meier, Eugene Iwaniczko, R. Bauer, L. Roybal, Qing Wang, M. R. Page
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
Minority carrier lifetime and Suns-V oc measurements are well-accepted methods for characterization of solar cell devices. We use these methods, with an instrument from Sinton Consulting, as we fabricate and optimize state-of-the-art all hot-wire che