Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Daniel L. Lepkowski"'
Autor:
Jacob T. Boyer, Steven A. Ringel, Daniel J. Chmielewski, Tyler J. Grassman, Daniel L. Lepkowski
Publikováno v:
IEEE Journal of Photovoltaics. 11:408-414
A high-performance metamorphic Al0.2Ga0.8As0.75P0.25/GaAs0.75P0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs0.75P0.25/Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic che
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::792696cf4ff0e54f182e2cf1df8dc6eb
https://doi.org/10.1109/jphotov.2021.3052773
https://doi.org/10.1109/jphotov.2021.3052773
Publikováno v:
IEEE Journal of Photovoltaics. 11:400-407
This work explores epitaxially integrated distributed Bragg reflectors (DBR) as a strategy to mitigate the impact of threading dislocations on the performance of monolithic GaAs0.75P0.25/Si tandem solar cells. The constraints present because of mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d809e97dba8c0a4176afa151897681
https://doi.org/10.1109/jphotov.2020.3043105
https://doi.org/10.1109/jphotov.2020.3043105
Publikováno v:
Crystal Growth & Design. 20:6939-6946
The novel use of a GaAsyP1-y/GaP compressively-strained superlattice (CSS) to provide enhanced control over misfit dislocation (MD) evolution and threading dislocation density (TDD) during GaP/Si m...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad628ba8693f70d84e6abfb84bebad2b
https://doi.org/10.1021/acs.cgd.0c00992
https://doi.org/10.1021/acs.cgd.0c00992
Autor:
Steven A. Ringel, Daniel J. Chmielewski, Tyler J. Grassman, Daniel L. Lepkowski, Jacob T. Boyer, Tal Kasher
Publikováno v:
IEEE Journal of Photovoltaics. 10:758-764
This article highlights the critical role of window design on short circuit carrier collection in rear-emitter solar cells, as demonstrated through modeling and experiment using metamorphic GaAsyP1-y. Ultimately, if the window design is not carefully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69d85bfe3fc6334ff19b72bfc18682f
https://doi.org/10.1109/jphotov.2020.2978863
https://doi.org/10.1109/jphotov.2020.2978863
Autor:
Steven A. Ringel, Daniel J. Chmielewski, Amber C. Silvaggio, Tyler J. Grassman, Daniel L. Lepkowski, Jacob T. Boyer
Publikováno v:
IEEE Journal of Photovoltaics. 9:1644-1651
A rear-emitter (rear-junction) n -on- p + device design was investigated for use in metamorphic monolithic III–V/Si tandem solar cells as an alternative to the traditional front-emitter (front-junction) n +-on- p design for potentially greater resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516528127b27fce08dbee99eec43f249
https://doi.org/10.1109/jphotov.2019.2939069
https://doi.org/10.1109/jphotov.2019.2939069
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Threading dislocation density (TDD) is a key parameter that commonly limits the performance of epitaxially integrated III-V/Si photovoltaics. The GaP/Si epitaxial bridge is a widely studied III-V on Si integration pathway, and recent advances have re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11faea53c65eeb55b75cda1f9c2999b2
https://doi.org/10.1109/pvsc43889.2021.9518431
https://doi.org/10.1109/pvsc43889.2021.9518431
Autor:
Daniel L. Lepkowski, Stephen Bremner, Jacob T. Boyer, Tyler J. Grassman, Hamid Mehrvarz, Mattias K. Juhl, Udo Römer, Zak H. Blumer, Anastasia Soeriyadi, Chuqi Yi, Tal Kasher, Steven A. Ringel, Anita Ho-Baillie
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Historically, the performance of monolithically-integrated GaAsP/Si tandem solar cells has been limited by the presence of elevated TDD in the GaAsP subcell. However, our recent development of low-TDD GaAsP/Si virtual substrates has greatly improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa8bbfea5b5f408a776485b2455c5277
https://doi.org/10.1109/pvsc43889.2021.9518768
https://doi.org/10.1109/pvsc43889.2021.9518768
Autor:
Jacob T. Boyer, William Nemeth, Vincenzo LaSalvia, Emily L. Warren, Emily A. Makoutz, Daniel L. Lepkowski, Theresa E. Saenz, Tyler J. Grassman, Steven A. Ringel
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
The degradation of photocarrier bulk lifetime in Si wafer substrates during the heteroepitaxial growth of III-V materials has been widely reported and is known to limit the efficiency of III-V/Si tandem solar cells. There have been prior strategies t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe58b6fafd3ca6a08a8f76dfd395015
https://doi.org/10.1109/pvsc45281.2020.9300356
https://doi.org/10.1109/pvsc45281.2020.9300356
Autor:
Jacob T. Boyer, Steven A. Ringel, Ari N. Blumer, Daniel L. Lepkowski, Zak H. Blumer, Tyler J. Grassman, Francisco A. Rodriguez
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Metamorphic III-V/Si materials with low threading dislocation density (TDD) are critical to realizing high-efficiency III-V/Si multijunction photovoltaics. In pursuit of a dual junction III-V/Si design with a GaAs 0.75 P 0.25 top junction epitaxially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0be74d4e3a722ccb4eecbd1c367feed3
https://doi.org/10.1109/pvsc45281.2020.9300803
https://doi.org/10.1109/pvsc45281.2020.9300803
Autor:
Steven A. Ringel, Daniel Derkacs, Zak H. Blumer, Stephen Bremner, Anita Ho-Baillie, Chuqi Yi, Anastasia Soeriyadi, Daniel L. Lepkowski, Alex Stavrides, Tyler J. Grassman, Mattias K. Juhl, Chris Kerestes, Jacob T. Boyer, Hamid Mehrvarz
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Detailed loss analysis of our previously reported 21.8% (unverified) monolithic GaAsP/Si tandem cells has identified and quantified three main mechanisms limiting cell performance: dislocation mediated voltage and current losses, improper bandgap pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d5875f45196732c89064f86d05fb74
https://doi.org/10.1109/pvsc45281.2020.9300787
https://doi.org/10.1109/pvsc45281.2020.9300787