Výsledky vyhledávání - "Daniel L. Creedon"

Silicon–Aluminum Phase-Transformation-Induced Superconducting Rings

Autor: Brett C. Johnson, Michael Stuiber, Daniel L. Creedon, Manjith Bose, Amanuel Berhane, Laurens Henry Willems van Beveren, Sergey Rubanov, Jared H. Cole, Vincent Mourik, Alexander R. Hamilton, Timothy L. Duty, Jeffrey Colin McCallum

Publikováno v: Nano Letters. 23:17-24

The development of devices that exhibit both superconducting and semiconducting properties is an important endeavor for emerging quantum technologies. We investigate superconducting nanowires fabricated on a silicon-on-insulator (SOI) platform. Alumi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94244710f19fdcf6283c3613606af32f
https://doi.org/10.1021/acs.nanolett.2c02814

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Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases

Autor: Nitu Syed, Alastair Stacey, Ali Zavabeti, Chung Kim Nguyen, Benedikt Haas, Christoph T. Koch, Daniel L. Creedon, Enrico Della Gaspera, Philipp Reineck, Azmira Jannat, Matthias Wurdack, Sarah E. Bamford, Paul J. Pigram, Sherif Abdulkader Tawfik, Salvy P. Russo, Billy J. Murdoch, Kourosh Kalantar-Zadeh, Chris F. McConville, Torben Daeneke

Publikováno v: ACS Nano. 16:5476-5486

Indium nitride (InN) has been of significant interest for creating and studying two-dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in ultrathin doped and undoped 2D InN nanosheets featuring high carrier mobilities at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a321c3a52f165f3db600daf137d30394
https://doi.org/10.1021/acsnano.1c09636

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High-mobility p-type semiconducting two-dimensional β-TeO2

Autor: Aaron Elbourne, Salvy P. Russo, Matthias Wurdack, Bao Yue Zhang, Hayden Tuohey, Christopher F McConville, Azmira Jannat, Kourosh Kalantar-zadeh, Ali Zavabeti, Joel van Embden, Nitu Syed, Kibret A Messalea, Patjaree Aukarasereenont, Torben Daeneke, Daniel L. Creedon, Jim G. Partridge, Billy J. Murdoch

Publikováno v: Nature Electronics. 4:277-283

Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many high-mobility n-type oxide semiconductors are known, wide-bandgap p-type oxides have carrier mobilitie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01f1e17471de0aabf4f48a362f0ee53f
https://doi.org/10.1038/s41928-021-00561-5

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Surface transfer doping of diamond using solution-processed molybdenum trioxide

Autor: Enrico Della Gaspera, Steve A. Yianni, Christopher Ian Pakes, Jeffrey C. McCallum, Joel van Embden, Daniel L. Creedon, Dongchen Qi, Kaijian Xing, Linjun Wang, Jian Huang, Wei Li, Tony Wang, Lei Zhang

Publikováno v: Carbon. 175:20-26

The surface of hydrogen-terminated diamond (H-terminated diamond) supports a p-type surface conductivity when interfaced with high electron-affinity surface acceptors through the surface transfer doping process. High electron-affinity transition meta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3720f315e1f47f9d9c3a5320ed264d98
https://doi.org/10.1016/j.carbon.2020.12.079

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Low-noise diamond-based D.C. nano-SQUIDs

Autor: Manjith Bose, Daniel L. Creedon, Anders Barlow, Michael Stuiber, Georgina M. Klemencic, Soumen Mandal, Oliver Williams, Grant van Riessen, Christopher I. Pakes

Nanoscale superconducting quantum interference devices (nano-SQUIDs) with Dayem bridge junctions and a physical loop size of 50 nm have been engineered in boron-doped nanocrystalline diamond films using precision Ne-ion beam milling. In an unshunted

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b96a410c4c8f43059e427fdba9513dec
https://orca.cardiff.ac.uk/id/eprint/149449/3/Paper_NCD_SQUID_V9.pdf

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Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond

Autor: Steve A. Yianni, Lothar Ley, Golrokh Akhgar, Christopher Ian Pakes, Dongchen Qi, Jeffrey C. McCallum, Lei Zhang, Kaijian Xing, Daniel L. Creedon

Publikováno v: Carbon. 164:244-250

Hydrogen-terminated diamond possesses an intriguing p-type surface conductivity which is induced via thermodynamically driven electron transfer from the diamond surface into surface acceptors such as atmospheric adsorbates, a process called surface t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c1f806ab759c3fb052419ae6621a1b45
https://doi.org/10.1016/j.carbon.2020.03.047

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Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

Autor: Steven Prawer, N. Eikenberg, Kumaravelu Ganesan, Daniel L. Creedon, Dimitry Churochkin, Brett C. Johnson, George Chimowa, L. H. Willems van Beveren, Somnath Bhattacharyya

We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c36b220b76238dfeb8069e40a1699fb8

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