Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Daniel Kälblein"'
Autor:
Matthias Schwab, Ilja Vladimirov, Wolfgang Kowalsky, Daniel Kälblein, Ralf Thomas Weitz, Catherine Chow, A. J. Strudwick
Publikováno v:
physica status solidi (a). 212:2059-2067
Rational use of novel high-performance semiconductors in field-effect transistors (FETs) requires exact knowledge of the dominating charge transport mechanisms. In particular, the distinction between contact- and semiconductor-limited transport is im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e4219e2723db7a18119d068ea69fd8
https://doi.org/10.1002/pssa.201532157
https://doi.org/10.1002/pssa.201532157
Publikováno v:
Advanced Electronic Materials. 5:1970049
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b67bfd5ab6f67b6b21d0b91f90acc8
https://doi.org/10.1002/aelm.201970049
https://doi.org/10.1002/aelm.201970049
Autor:
Bernhard Fabel, Alexei O. Orlov, Daniel Kälblein, Gergo P. Szakmany, Mario Bareiss, Hagen Klauk, Wolfgang Porod, Badri Tiwari, Gary H. Bernstein, Paolo Lugli, Giuseppe Scarpa, Peter M. Krenz, Ute Zschieschang
Publikováno v:
IEEE Transactions on Nanotechnology. 12:1144-1150
In the late 1960s, a new concept was proposed for an infrared absorbing device called a “rectenna” that, combining an antenna and a nanoscale metal-insulator-metal diode rectifier, collects electromagnetic radiation in the terahertz regime, with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15dfff7e1f2fe87153c381c32da62a0f
https://doi.org/10.1109/tnano.2013.2281373
https://doi.org/10.1109/tnano.2013.2281373
Autor:
Bernhard Fabel, Ute Zschieschang, Gunther Jegert, M. Bareiß, Daniel Kälblein, Paolo Lugli, Edward M. Nelson, Hagen Klauk, Christian Jirauschek, Giuseppe Scarpa, Frederik Ante, Gregory Timp, Wolfgang Porod
Publikováno v:
ACS Nano. 6:2853-2859
Nanoscale metal-insulator-metal (MIM) diodes represent important devices in the fields of electronic circuits, detectors, communication, and energy, as their cutoff frequencies may extend into the "gap" between the electronic microwave range and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b344879c73ab82ea7079fee8322f0200
https://doi.org/10.1021/nn3004058
https://doi.org/10.1021/nn3004058
Autor:
Joachim N. Burghartz, Daniel Kälblein, Kazuo Takimiya, Tsuyoshi Sekitani, Masa-Aki Ikeda, Hagen Klauk, Frederik Ante, Takao Someya, Klaus Kern, Ute Zschieschang, Tarek Zaki
Publikováno v:
Small. 8:73-79
Bottom-gate, top-contact organic thin-film transistors (TFTs) with excellent static characteristics (on/off ratio: 10(7) ; intrinsic mobility: 3 cm(2) (V s)(-1) ) and fast unipolar ring oscillators (signal delay as short as 230 ns per stage) are fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dd517991e0c22c5250efc17ac60c755
https://doi.org/10.1002/smll.201101677
https://doi.org/10.1002/smll.201101677
Publikováno v:
ACS Nano. 5:7525-7531
A fabrication process for the monolithic integration of field-effect transistors based on individual carbon nanotubes and load resistors based on vacuum-evaporated carbon films into fast unipolar logic circuits on glass substrates is reported for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faa14cb3c860ce535faff6e797bb29fb
https://doi.org/10.1021/nn202486v
https://doi.org/10.1021/nn202486v
Autor:
Takao Someya, Frederik Ante, Jan Blochwitz Nimoth, Hagen Klauk, Tatsuya Yamamoto, Tsuyoshi Sekitani, Daniel Kälblein, Hirokazu Kuwabara, Kazuo Takimiya, Masaaki Ikeda, Ute Zschieschang
Publikováno v:
Organic Electronics. 12:1370-1375
Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho(2,3-b:2 0,30-f)thieno(3,2-b)thiophene (DNTT) have been fabri- cated and characterized. The transistors have field-effect mobilities as large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f15f8a48d51bfbb974b755caa441ef
https://doi.org/10.1016/j.orgel.2011.04.018
https://doi.org/10.1016/j.orgel.2011.04.018
Autor:
Jochen Brill, Nis Hauke Hansen, Xutang Tao, Jens Pflaum, Matthias Stolte, Thomas Musiol, Christian Burschka, Daniel Kälblein, Tao He, Frank Würthner
Publikováno v:
Nature Communications. 6
Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81bc430cac47edfcd59d5debe9f3e4b4
https://doi.org/10.1038/ncomms6954
https://doi.org/10.1038/ncomms6954
Autor:
Tao, He, Matthias, Stolte, Christian, Burschka, Nis Hauke, Hansen, Thomas, Musiol, Daniel, Kälblein, Jens, Pflaum, Xutang, Tao, Jochen, Brill, Frank, Würthner
Publikováno v:
Nature communications. 6
Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3817ec4c817835ef492aeb311c36aa46
https://pubmed.ncbi.nlm.nih.gov/25581709
https://pubmed.ncbi.nlm.nih.gov/25581709
Autor:
Klaus Kern, Hyeyeon Ryu, Kersten Hahn, Hagen Klauk, Frederik Ante, Daniel Kälblein, Bernhard Fenk
Publikováno v:
ACS nano. 8(7)
A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdb4ab17da881052609783f054899855
https://pubmed.ncbi.nlm.nih.gov/24940627
https://pubmed.ncbi.nlm.nih.gov/24940627