Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Daniel Johannesson"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 304-314 (2021)
The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JT
Externí odkaz:
https://doaj.org/article/41869fad890a48649c3b31a9896036bd
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:5048-5058
Dynamic avalanche (DA) phenomena and current filament (CF) formation are two extreme conditions observed in high-power devices, setting the maximum limit on turn-on/off current capability and di/dt in Silicon-based bipolar devices. The properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e9387a039df4ec62fd393a99564d3e3
https://doi.org/10.1109/jestpe.2021.3100146
https://doi.org/10.1109/jestpe.2021.3100146
Publikováno v:
IEEE Transactions on Power Electronics. 37:4133-4147
Evaluation of Ultrahigh-Voltage 4H-SiC Gate Turn-Off Thyristors and Insulated-Gate Bipolar Transistors for High-Power Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c59b20f4cb50ef1584693a7076693fe
https://doi.org/10.1109/tpel.2021.3122988
https://doi.org/10.1109/tpel.2021.3122988
Publikováno v:
IEEE Transactions on Power Electronics. 36:8887-8906
Recent advancements in silicon carbide (SiC) powersemiconductor technology enable developments in the high-powersector, e.g., high-voltage direct current (HVdc) converters fortransmission, where today silicon (Si) devices are state-of-the-art. New su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::840191fc31c8bcc34f241f20bc2aad8a
https://doi.org/10.1109/tpel.2021.3049320
https://doi.org/10.1109/tpel.2021.3049320
Publikováno v:
IEEE Transactions on Power Electronics. 36:5874-5891
The performance of theoretical ultrahigh-voltage power semiconductor devices has been predicted by means of numerical simulations using the Sentaurus technology computer-aided design tool. A general silicon carbide punch-through insulated-gate bipola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d691a64c6f6dffd16486d73c40e6b432
https://doi.org/10.1109/tpel.2020.3027370
https://doi.org/10.1109/tpel.2020.3027370
Publikováno v:
Materials Science Forum. 963:670-673
In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Syn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6daad7c29d79f98fca0c60e1b2cb2b9c
https://doi.org/10.4028/www.scientific.net/msf.963.670
https://doi.org/10.4028/www.scientific.net/msf.963.670
Publikováno v:
IEEE Transactions on Power Electronics. 33:5215-5225
This paper presents a thorough characterization of 10 kV SiC mosfet power modules, equipped with third-generation mosfet chips and without external free-wheeling diodes, using the inherent SiC mosfet body-diode instead. The static performance (e.g.,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20a063b55e4d3d7a3da64804f0863d94
https://doi.org/10.1109/tpel.2017.2728723
https://doi.org/10.1109/tpel.2017.2728723
Autor:
Daniel Johannesson, Muhammad Nawaz
Publikováno v:
Microelectronics Journal. 53:167-176
A simple analytical PSpice model has been developed and verified for a 4H–SiC based MOSFET power module with voltage and current ratings of 1200 V and 120 A. The analytical simulation model is a temperature dependent silicon carbide (SiC) MOSFET mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98f5f2c07d9aaaf3ebfd8693c7a5c789
https://doi.org/10.1016/j.mejo.2016.05.001
https://doi.org/10.1016/j.mejo.2016.05.001
Autor:
Muhammad Nawaz, Daniel Johannesson
Publikováno v:
IEEE Transactions on Power Electronics. 31:4517-4525
A simple analytical Spice-type model has been developed and verified for the first time for 4H-SiC-based bipolar junction transistor (BJT) power module with voltage and current rating of 1200 V and 800 A. The simulation model is based on a temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8b64bfa215da40363bfc46c2230007
https://doi.org/10.1109/tpel.2015.2477477
https://doi.org/10.1109/tpel.2015.2477477
Autor:
Muhammad Nawaz, Daniel Johannesson
Publikováno v:
Materials Science Forum. 858:1074-1077
In this paper, the static and dynamic characteristics of a 1200 V and 120 A silicon carbide (SiC) MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. Experimental measurements and PSpice simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7704cd8fac601ffc7f6f4dab8f7c93da
https://doi.org/10.4028/www.scientific.net/msf.858.1074
https://doi.org/10.4028/www.scientific.net/msf.858.1074