Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Daniel J. Prager"'
Autor:
Blake R Parkinson, Asao Yamashita, Merritt Funk, Thomas F. Edgar, Radha Sundararajan, Hyung Lee, Daniel J. Prager
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 23:185-193
Multivariate plasma etch modeling and control methodology are presented based on 65 and 45 nm gate production data utilizing wafer-to-wafer tool-level scatterometry. The selection of etch recipe variables for optimal control of wafer-to-wafer profile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755a463e900eef01b75e9aa59c2891b4
https://doi.org/10.1109/tsm.2010.2041293
https://doi.org/10.1109/tsm.2010.2041293
Autor:
Merritt Funk, Qingyun Yang, Joyce C. Liu, Matthew Sendelbach, Jeffrey S. Brown, Daniel J. Prager, Peter E. Cottrell, David V. Horak, Eric P. Solecky, Randy W. Mann, Sadanand V. Deshpande, Wesley C. Natzle, F. Higuchi, Chienfan Yu, Hussein I. Hanafi, Akihisa Sekiguchi, Subramanian S. Iyer, W. Yan, Bruce B. Doris, Masayuki Tomoyasu, James P. Norum, Len Y. Tsou, Asao Yamashita, Hiroyuki Takahashi
Publikováno v:
2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530).
A method for formation and control of silicon gates or fins uses trim of a hard mask by a new gaseous oxide etch. The method decouples final feature size from lithography and from the RIE resist trim/oxide mask open processes. Logic blocks with two s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba080838e461856e140db41f0f32479a
https://doi.org/10.1109/asmc.2004.1309536
https://doi.org/10.1109/asmc.2004.1309536