Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Daniel J Mannion"'
Autor:
Adnan Mehonic, Daniele Ielmini, Kaushik Roy, Onur Mutlu, Shahar Kvatinsky, Teresa Serrano-Gotarredona, Bernabe Linares-Barranco, Sabina Spiga, Sergey Savel’ev, Alexander G. Balanov, Nitin Chawla, Giuseppe Desoli, Gerardo Malavena, Christian Monzio Compagnoni, Zhongrui Wang, J. Joshua Yang, Syed Ghazi Sarwat, Abu Sebastian, Thomas Mikolajick, Stefan Slesazeck, Beatriz Noheda, Bernard Dieny, Tuo-Hung (Alex) Hou, Akhil Varri, Frank Brückerhoff-Plückelmann, Wolfram Pernice, Xixiang Zhang, Sebastian Pazos, Mario Lanza, Stefan Wiefels, Regina Dittmann, Wing H. Ng, Mark Buckwell, Horatio R. J. Cox, Daniel J. Mannion, Anthony J. Kenyon, Yingming Lu, Yuchao Yang, Damien Querlioz, Louis Hutin, Elisa Vianello, Sayeed Shafayet Chowdhury, Piergiulio Mannocci, Yimao Cai, Zhong Sun, Giacomo Pedretti, John Paul Strachan, Dmitri Strukov, Manuel Le Gallo, Stefano Ambrogio, Ilia Valov, Rainer Waser
Publikováno v:
APL Materials, Vol 12, Iss 10, Pp 109201-109201-59 (2024)
Externí odkaz:
https://doaj.org/article/f5e2e018db184cdfa86a6be24ff6f6e6
Autor:
Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Horatio R. J. Cox, Stephen Hudziak, Adnan Mehonic, Anthony J. Kenyon
Publikováno v:
Frontiers in Nanotechnology, Vol 3 (2021)
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due
Externí odkaz:
https://doaj.org/article/c1cdbdbe4c024d0bb9ea8fe7e774c965
Autor:
Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon
Publikováno v:
APL Materials, Vol 9, Iss 11, Pp 111109-111109-9 (2021)
The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices. To test models of oxygen movement in
Externí odkaz:
https://doaj.org/article/6fb9ffa027bb410f95376d9d8dd875ab
Publikováno v:
Frontiers in Neuroscience, Vol 13 (2020)
Memristors have many uses in machine learning and neuromorphic hardware. From memory elements in dot product engines to replicating both synapse and neuron wall behaviors, the memristor has proved a versatile component. Here we demonstrate an analog
Externí odkaz:
https://doaj.org/article/addbbe27c6aa43079ee916df2605547c
A resistance switching device exhibiting potentiation and depression under the same voltage polarity
Publikováno v:
2022 IEEE 22nd International Conference on Nanotechnology (NANO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::407662bd31f97c3506070e242c37f0e7
https://doi.org/10.1109/nano54668.2022.9928726
https://doi.org/10.1109/nano54668.2022.9928726
Autor:
Anthony J Kenyon, Adnan Mehonic, Wing Ng, Longfei Zhao, Horatio Cox, Mark Buckwell, Kamal Patel, Andrew P Knights, Daniel J Mannion, Alexander L Shluger
Publikováno v:
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45d0bef5c7c53232f7fc0a840406304f
https://doi.org/10.1109/mocast54814.2022.9837783
https://doi.org/10.1109/mocast54814.2022.9837783
Autor:
Itir Koymen, Sweety Deswal, Asal Kiazadeh, Alexandra I. Berg, Anthony J. Kenyon, Carlo Ricciardi, Yang Li, Yuchao Yang, Daniele Ielmini, Daniel J. Mannion, Ella Gale, Themis Prodromakis, Ilia Valov, Simon Brown, Jonas Deuermeier, Stefano Brivio, Dirk J. Wouters, Maximilian Speckbacher, R. Stanley Williams, Sebastian Siegel, Hyunsang Hwang, Giacomo Indiveri, Geoffrey W. Burr, Michael N. Kozicki, Wei Wang
Publikováno v:
Berg, S, Brivio, S, Brown, S, Burr, G, Deswal, S, Deuermeier, J, Gale, E, Hwang, H, Ielmini, D, Indiveri, G, Kenyon, T, Kiazadeh, A, Köymen, I, Kozicki, M, Li, Y, Mannion, D, Prodromakis, T, Ricciardi, C, Siegel, S, Speckbacher, M, Valov, I, Wang, W, Williams, S, Wouters, D & Yang, Y 2019, ' Synaptic and neuromorphic functions: general discussion ', Faraday Discussions, vol. 213, pp. 553-578 . https://doi.org/10.1039/C8FD90065E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3bb5f5bca4d1af7a2c3609c6cf8934c
https://doi.org/10.1039/c8fd90065e
https://doi.org/10.1039/c8fd90065e