Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Daniel Hao-Tien Lee"'
Autor:
John C.H. Lin, Daniel Hao-Tien Lee
Publikováno v:
SPIE Proceedings.
Mostly, crown-shaped DRAM capacitor is formed by depositing a series of polysilicon and silicon oxide in a recess followed by etching back to form the vertical side-wall. In this paper, we are proposing a new method which is directly using crown-shap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::974da14ea09ecdc86a2f347d86836649
https://doi.org/10.1117/12.240951
https://doi.org/10.1117/12.240951
Autor:
Daniel Hao-Tien Lee, Chang-Ming Dai
Publikováno v:
SPIE Proceedings.
The relationships of contact angle among different substrates, the role of dehydrating bake on photoresist profile and the relationship between contact angle and photoresist profile are addressed in this paper. Generally speaking, when the HMDS primi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::594ef7177c84e0aea223fd10f56489aa
https://doi.org/10.1117/12.210406
https://doi.org/10.1117/12.210406
Publikováno v:
SPIE Proceedings.
Three types of dies on the wafer including dies on wafer edge, dies adjacent to testkey patterns, and dies with asymmetric chip layout have been identified for mistilting on the lithography exposure processes. There are several approaches i.e. dummy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f9eae8068f432647b09f6ae193b238
https://doi.org/10.1117/12.209311
https://doi.org/10.1117/12.209311
Publikováno v:
SPIE Proceedings.
The lithography processes for the metal layers of stacked DRAM have normally been considered as one of the most important steps to determine the chip yield performance. The severe topography step-height on the metal resist processes normally leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2794b0caa1edae23adc5639679ebe7ca
https://doi.org/10.1117/12.175493
https://doi.org/10.1117/12.175493
Autor:
Daniel Hao-Tien Lee, Gwo-Yuh Shiau
Publikováno v:
SPIE Proceedings.
The stacked cell design of DRAM processes for lithography considerations has suffered severe topography step-height and unsmooth surface issues. In addition, the stability and uniformity control of thin film processes on the backend process can affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4abfb3c79600ce7702dbb3d45916a7
https://doi.org/10.1117/12.174163
https://doi.org/10.1117/12.174163
Publikováno v:
SPIE Proceedings.
I-line lithography, together with single-layer resist processes, practically, have been limited to 0.45 micrometers design rules in the semiconductor industry. For design rules of 0.4 micrometers and below, several contrast enhanced methods have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd780067ccda052e3867e70ab1e1ee9
https://doi.org/10.1117/12.150434
https://doi.org/10.1117/12.150434
Publikováno v:
SPIE Proceedings.
The striation problem on 8' topographical wafers is reported. The striation on topographical wafers is not observed on planar wafers. The degree of striation increases with topographical step-height for the traditional photoresist dispense method. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b6a12b71ed2cd4c6e04d44883f5f1b
https://doi.org/10.1117/12.150472
https://doi.org/10.1117/12.150472
Autor:
Ronfu Chu, Daniel Hao-Tien Lee
Publikováno v:
SPIE Proceedings.
Proximity effect, in general, is a major concern for submicron lithography. There are two kinds of proximity effect, i.e. global and local proximity effects, normally observed in the submicron lithography processes. Local proximity effect is occurred
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0651edb9fa95e0cb4d73347417a1ce
https://doi.org/10.1117/12.130318
https://doi.org/10.1117/12.130318
Publikováno v:
Japanese Journal of Applied Physics. 33:7001
The resist development mechanism of both spray puddle and stream puddle methods was addressed in this paper. Two mechanisms were proposed: the pressure effect in which the spray pressure contributes to the development rate of line/space structure lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc093d30614721f5909c2c99b2accc4
https://doi.org/10.1143/jjap.33.7001
https://doi.org/10.1143/jjap.33.7001
Publikováno v:
Japanese Journal of Applied Physics; December 1994, Vol. 33 Issue: 12 p7001-7001, 1p