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Publikováno v:
IEEE Transactions on Electron Devices. 62:36-43
We present experimental results on the realization of p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors. We investigate the influence of three device parameters (drain doping, channel length, and tunnel barrier heig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ede0b5cd68ee6a0a040bb2c71f814ca7
https://doi.org/10.1109/ted.2014.2371065
https://doi.org/10.1109/ted.2014.2371065
